Silver-containing film etching liquid composition and conductive pattern forming method using the same

A conductive pattern and composition technology, applied in the field of silver-containing film etching solution composition, can solve the problems of etching rate difference, residue, difficulty in adjusting etching rate, etc., and achieve the effect of inhibiting re-precipitation and improving solubility

Active Publication Date: 2019-03-05
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of using the above-mentioned inorganic strong acid, defects such as uneven etching profile, over-etch, and over-hang due to the difference in etching rate of different conductive films may occur, and it is difficult to adjust Etching rate for fine pattern formation
[0007] In addition, silver (Ag) has a low oxidation / reduction potential, and after etching, re-adsorption, residue, etc. may occur, and in this case, short circuits may occur between adjacent conductive patterns, etc.

Method used

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  • Silver-containing film etching liquid composition and conductive pattern forming method using the same
  • Silver-containing film etching liquid composition and conductive pattern forming method using the same
  • Silver-containing film etching liquid composition and conductive pattern forming method using the same

Examples

Experimental program
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Effect test

experiment example

[0151] formed on a glass substrate The three-layer film was cut into a size of 10 cm×10 cm using a diamond knife to produce a sample.

[0152] An etching process is performed on the above-mentioned three-layer film through a photolithography process. Specifically, the etchant compositions of Examples and Comparative Examples were injected into a jet etching device (ETCHER, manufactured by K.C. Tech Co., Ltd.). After setting the temperature of the etching liquid composition to 40° C., when the temperature reached 40±0.1° C., the etching liquid composition was sprayed on the sample to implement an etching process for 85 seconds.

[0153] After the etching process, the above samples were cleaned with deionized water, dried with a hot air drying device, and the photoresist was removed using a photoresist stripper (PR stripper).

[0154] (1) Evaluation of silver resorption

[0155] About the etched sample, the whole-surface observation of the scanning electron microscope (SU-80...

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Abstract

The invention provides a silver-containing film etching liquid composition and a conductive pattern forming method using the same. The silver-containing film etching liquid composition comprises an etching initiator, an inorganic acid, an organic acid and the balance of water, and when the silver (Ag) concentration is 10,000 ppm, its absorption wavelength is 300-370 nm. By using the silver-containing film etching solution composition, a micro-sized conductive pattern with reduced bad etching.

Description

technical field [0001] The present invention relates to a silver-containing film etchant composition and a conductive pattern forming method using the same. More specifically, it is related with the metal film etchant composition containing an acid component, and the conductive pattern formation method using it. Background technique [0002] For example, thin film transistors (Thin Film Transistor: TFT) are used as part of driving circuits of semiconductor devices and display devices. For example, TFT is arranged according to each pixel on the substrate of an organic light-emitting display (OLED) device or a liquid crystal display device (LCD), and wiring such as pixel electrodes, counter electrodes, source electrodes, drain electrodes, data lines, power lines, etc. connect. [0003] In order to form the electrodes or wirings, a metal film may be formed on a display substrate, and after forming a photoresist on the metal film, the metal film may be partially removed using ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06H01L21/3213
CPCH01L21/32134C09K13/06C23F1/30G02F1/136286G02F1/13439H01L27/124
Inventor 金童基南基龙沈庆辅
Owner DONGWOO FINE CHEM CO LTD
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