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Preparation method of carbon/carbon composite material PECVD (Plasma Enhanced Chemical Vapor Deposition) carrying frame

A carbon composite material and composite material technology, applied in the field of carbon/carbon composite material PECVD carrier frame preparation, can solve the problems that the graphite carrier frame is easy to be damaged, increase the replacement frequency of the graphite carrier frame, the PECVD process cost, and the lifting space is limited, etc. Achieve the effect of strong anti-plasma sputtering, strong mechanical properties and low preparation cost

Inactive Publication Date: 2019-03-08
上海康碳复合材料科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The graphite carrier frame has limited space to increase the loading capacity of silicon wafers. In addition, in the harsh coating environment and pickling process, the graphite carrier frame is easily damaged, which greatly increases the replacement frequency of the graphite carrier frame and the PECVD process cost.

Method used

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  • Preparation method of carbon/carbon composite material PECVD (Plasma Enhanced Chemical Vapor Deposition) carrying frame

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A preparation method of a carbon / carbon composite material PECVD carrying frame, comprising the following steps:

[0031] 1) The prefabricated body is formed, and the PAN (polyacrylonitrile) carbon cloth and the non-weft cloth are laminated according to the mass ratio of 7:3, and then punctured in the Z direction to obtain a prefabricated body with a thickness of 5mm, a length of 1200mm, and a width of 500mm. body plate;

[0032] 2) Graphitization treatment of the prefabricated body plate. According to the preparation product specifications, select the prefabricated body plate of the corresponding size and place it in a high-temperature furnace for graphitization treatment at 2200 ° C for 2 hours;

[0033] 3) Install the furnace, place the prefabricated body panels in the deposition furnace closely, and control the gap between each layer of prefabricated bodies at 5mm;

[0034] 4) Purge, use high-purity Ar to purge the entire high-temperature vapor deposition furnace, ...

Embodiment 2

[0042] A preparation method of a carbon / carbon composite material PECVD carrying frame, comprising the following steps:

[0043] 1) The prefabricated body is formed, and the PAN (polyacrylonitrile) carbon cloth and the non-weft cloth are laminated according to the mass ratio of 7:3, and then punctured in the Z direction to obtain a prefabricated body with a thickness of 30mm, a length of 2000mm, and a width of 2000mm. body plate;

[0044] 2) Graphitization treatment of the prefabricated body plate. According to the preparation product specifications, select the prefabricated body plate of the corresponding size and place it in a high-temperature furnace for graphitization treatment at 600 ° C for 5 hours;

[0045] 3) Install the furnace, place the prefabricated body panels in the deposition furnace closely, and control the gap between each layer of prefabricated bodies at 30mm;

[0046] 4) Purge, use high-purity N 2 The entire high-temperature vapor deposition furnace is pur...

Embodiment 3

[0054] A preparation method of a carbon / carbon composite material PECVD carrying frame, comprising the following steps:

[0055] 1) The prefabricated body is formed, and the PAN (polyacrylonitrile) carbon cloth and the non-weft cloth are laminated according to the mass ratio of 7:3, and then punctured in the Z direction to obtain a prefabricated body with a thickness of 10mm, a length of 1500mm, and a width of 800mm body plate;

[0056] 2) Graphitization treatment of the prefabricated body plate. According to the preparation product specifications, select the prefabricated body plate of the corresponding size and place it in a high-temperature furnace for graphitization treatment at 2500 ° C for 3 hours;

[0057] 3) Install the furnace, place the prefabricated body panels in the deposition furnace closely, and control the gap between each layer of prefabricated bodies at 10mm;

[0058] 4) Purging, purging the entire high-temperature vapor deposition furnace with high-purity A...

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Abstract

The invention provides a preparation method of a carbon / carbon composite material PECVD (Plasma Enhanced Chemical Vapor Deposition) carrying frame. Compared with a traditional graphite material carrying frame, the carbon / carbon composite material carrying frame has the advantages that the mechanical property of the carbon / carbon composite material is superior to that of graphite; the carbon / carboncomposite material can adapt to the severe film plating environment of PECVD, such as high temperature, high vacuum degree, plasma sputtering and the like. In addition, the mechanical property of thecarbon / carbon composite material prepared by using a CVI (Chemical Vapor Deposition) process is better; after a silicon carbide coating is decomposed on the surface of the carbon / carbon composite material carrying frame, the acid washing resistance performance of the carrying frame is enhanced; the replacement frequency of the carrying frame is greatly reduced; the service life is prolonged.

Description

technical field [0001] The invention relates to a preparation method of a carbon / carbon composite material PECVD bearing frame. Background technique [0002] As the concept of sustainable development continues to take root in the hearts of the people around the world, many countries have listed solar energy as an emerging industry that focuses on development. The solar cell module system has also received more and more attention. In the production process of monocrystalline / polycrystalline silicon cells, it is necessary to coat the surface of the silicon wafer. This is because when the light is irradiated on the surface of the silicon wafer, the reflection will cause about one-third of the light loss. If there is a suitable thin film on the silicon surface, the reflection of light can be greatly reduced by using the principle of thin film interference, and this film becomes the antireflection coating (ARC, antireflection coating) of the solar cell. The silicon nitride thin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/83C04B35/622
CPCC04B35/622C04B35/83C04B2235/614
Inventor 吴彪贾林涛邵忠
Owner 上海康碳复合材料科技有限公司