Amorphous thin film post-hydrogenation treatment method and silicon heterojunction solar cell preparation method

Abstract

The invention provides an amorphous thin film post-hydrogenation treatment method and a silicon heterojunction solar cell preparation method. The post-hydrogenation treatment method comprises the following steps: providing an amorphous thin film to be processed and placing the amorphous thin film in a reaction chamber provided with a hot wire; and introducing a reaction gas into the reaction chamber, performing hot wire catalytic decomposition on the reaction gas to at least generate hydrogen atoms, and performing thermal radiation on the amorphous thin film to be processed, so that the hydrogen atoms are diffused into the amorphous thin film to be processed, so as to realize the post-hydrogenation treatment of the amorphous thin film to be processed. According to the amorphous thin film post-hydrogenation treatment method provided by the invention, the hydrogen atoms are diffused into the thin film in the process of treating the amorphous thin film under the hot wire thermal radiationcondition, so that the defect state density such as dangling bonds in the thin film can be reduced; and the post-hydrogenation treatment method provided by the invention can be applied to an amorphous silicon / crystalline silicon heterojunction solar cell, such as a window material thereof, thus the passivation performance and the light transmittance performance of a window layer can be significantly improved, and the photoelectric conversion efficiency of the solar cell can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor structure preparation, and in particular relates to a post-hydrogenation treatment method of an amorphous thin film and a silicon heterojunction solar cell preparation method based thereon. Background technique [0002] In solar cell devices, the short-range order and long-range disorder of the amorphous structure make it difficult to control the preparation process and high density of defect states such as dangling bonds. The research has always been a hot spot in industry research. In addition, hydrogenated amorphous silicon materials are widely used in thin film transistors, solar cells and other devices due to their properties such as direct optical bandgap and energy band tunability. [0003] Chemical vapor deposition is the most commonly used method for preparing amorphous silicon thin films in solar cells. At present, the research on the structure of amorphous silicon thin films in t...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for post-hydrogenation treatment of amorphous thin films and a method for preparing silicon heterojunction solar cells based thereon, which are used to solve the problem of the internal problems of amorphous thin films in the prior art. The high density of defects such as dangling bonds and the damage to the film structure and the impact on the passivation effect of solar cells during the process of improving film defects

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