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DBR growth method applied to VCSEL as well as DBR and VCSEL

A technology of Bragg reflector and growth method, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of DBR reflection bandwidth narrowing, interface absorption enhancement, reflectivity decrease, etc., and achieve the reduction of series resistance and reduction of series connection Resistance, thickness reduction effect

Inactive Publication Date: 2019-03-12
中科芯电半导体科技(北京)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the insertion of the gradient layer, not only the DBR reflection bandwidth is narrowed, but also more interfaces are added to the gradient layer, resulting in enhanced interface absorption and decreased reflectivity.

Method used

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  • DBR growth method applied to VCSEL as well as DBR and VCSEL
  • DBR growth method applied to VCSEL as well as DBR and VCSEL

Examples

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Effect test

example 1

[0019] Example 1, the distributed Bragg reflector is a P-type distributed Bragg reflector, and the heterojunction interface of the optical standing wave node of the material crystal is Al 0.7-0.99 Ga 0.01-0.3 As / Al 0.01-0.25 Ga 0.75-0.99 As interface;

[0020]

[0021] As shown in Table 1, one of the growth cycles refers to alternately growing a pair of Al 0.7-0.99 Ga 0.01-0.3 As / Al 0.01-0.25 Ga 0.75-0.99 As crystals, respectively, in Al 0.7-0.99 Ga 0.01-0.3 As and Al 0.01-0.25 Ga 0.75-0.99 The interface between As is heavily doped with C or Be delta;

example 2

[0022] Example 2, the distributed Bragg reflector is an N-type distributed Bragg reflector, and the heterojunction interface of the optical standing wave node of the material crystal is Al 0.01-0.25 Ga 0.75-0.99 As / Al 0.7-0.99 Ga 0.01-0.3 As interface;

[0023]

[0024] As shown in Table 2, one of the growth cycles refers to alternately growing a pair of Al 0.01-0.25 Ga 0.75-0.99 As / Al 0.7-0.99 Ga 0.01-0.3 As crystals, respectively, in Al 0.01-0.25 Ga 0.75-0.99 As and Al 0.7-0.99 Ga 0.01-0.3 The interface between As is heavily delta-doped.

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Abstract

The invention provides a DBR (distributed Bragg reflector) growth method applied to a VCSEL (vertical cavity surface emitting laser) as well as a DBR and a VCSEL. Doping concentration on a DBR reflector interface is periodically regulated, namely a tunnel current formed by tunnel effect is increased through delta heavy doping, and corresponding series resistance can be reduced. Along with increaseof the doping concentration, the total series resistance of a periodically doped reflector is obviously reduced, and thickness of surface depletion layers of homogenous type heterojunctions is reduced. The surfaces of the heterojunctions correspond to nodes of light standing waves in the DBR, and the heavily doped regions are low in optical density, so that free carrier absorption is low, and theperiodically doped reflector has low resistance and high reflectivity.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a DBR growth method applied in VCSEL, a distributed Bragg reflector and a vertical cavity surface emitting laser. Background technique [0002] The thickness of the active region of the vertical cavity surface emitting laser (VCSEL) is only a few nanometers, and the one-way gain is very low. In order to achieve lasing, distributed Bragg reflectors (DBR) must be grown on the upper and lower sides of the active region. A typical DBR mirror structure obtains the high reflectivity expected by the design by alternately growing high and low refractive index films with a thickness of 1 / 4 wavelength for dozens of cycles. In order to ensure that the DBR has a high reflectivity and a wide reflection bandwidth, the two materials constituting the fundamental period of the distributed Bragg reflector should have a refractive index difference as large as possible, but this will also ca...

Claims

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Application Information

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IPC IPC(8): H01S5/187H01S5/183
CPCH01S5/18361H01S5/187
Inventor 张杨崔利杰
Owner 中科芯电半导体科技(北京)有限公司
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