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Al4SiC4 refractory material and preparation method thereof

A refractory material and premix technology, applied in the field of refractory materials, can solve the problems of high reaction temperature and long holding time, and achieve the effects of low reaction temperature, fast synthesis rate and short holding time

Inactive Publication Date: 2019-03-15
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the current solid state reaction synthesis of Al 4 SiC 4 There are disadvantages of high reaction temperature and long holding time

Method used

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  • Al4SiC4 refractory material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] This embodiment prepares Al 4 SiC 4 The refractory methods are:

[0025] Add metal aluminum, elemental silicon and aluminum-silicon alloy to the thermosetting phenolic resin, control the molar ratio of Al, Si and C to 4:1:4, and stir evenly to obtain the premix; then put the above premix at 200°C Bake for 27 hours, then treat it in an induction furnace, heat it up to 1000°C at a rate of 10°C / min for heating reaction, and then heat it at 1000°C for 0.5 h, that is Al 4 SiC 4 refractory material.

[0026] Al prepared in this example 4 SiC 4 Refractory material, purity ≥ 80%, after 1000°C water vapor corrosion for 100h (water vapor to air volume ratio is 1:4, total pressure is 1 standard atmospheric pressure), the weight gain rate is 3.75%.

Embodiment 2

[0028] This embodiment prepares Al 4 SiC 4 The refractory methods are:

[0029] Add metal aluminum, elemental silicon and aluminum-silicon alloy to the thermosetting phenolic resin, control the molar ratio of Al, Si and C to 4:1:4.2, stir evenly, and obtain the premix; then put the above premix at 200°C Bake for 24 to 30 hours, then go through induction furnace treatment, heat reaction and heat preservation in the induction furnace under a protective atmosphere, in which the rate is raised to 1200°C at a rate of 11°C / min for heating reaction, and after heating reaction at 1200°C Keep it warm for 0.5h to get Al 4 SiC 4 refractory material.

[0030] Al prepared in this example 4 SiC 4 Refractory material, purity ≥ 83%, after 1000°C water vapor corrosion for 100h (water vapor to air volume ratio is 1:4, total pressure is 1 standard atmospheric pressure), the weight gain rate is 3.35%.

Embodiment 3

[0032] This embodiment prepares Al 4 SiC 4 The refractory methods are:

[0033] Add metal aluminum, elemental silicon and aluminum-silicon alloy to the thermosetting phenolic resin, control the molar ratio of Al, Si and C to 4:1:4.4, stir evenly, and obtain the premix; then put the above premix at 200°C Bake for 24 to 30 hours, then pass through the induction furnace, and then heat the reaction and heat preservation in the induction furnace under the protective atmosphere. Keep it warm for 0.5h to get Al 4 SiC 4 refractory material.

[0034] Al prepared in this example 4 SiC 4 Refractory material, purity ≥ 85%, after 1000°C water vapor corrosion for 100h (water vapor to air volume ratio is 1:4, total pressure is 1 standard atmospheric pressure), the weight gain rate is 2.95%.

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Abstract

The invention relates to an Al4SiC4 refractory material and a preparation method thereof. Through the technical scheme, the preparation method comprises the following steps: adding metallic aluminum,monatomic silicon and an aluminum-silicon alloy into thermosetting phenolic resin, controlling the molar ratio of Al, Si to C to be (4: 1: 4) to (4: 1: 5), and stirring uniformly to obtain a premixedmaterial; then baking the premixed material at the temperature of 120 to 250 DEG C for 24 to 30 h, and then carrying out induction furnace treatment to obtain the Al4SiC4 refractory material. The Al4SiC4 refractory material prepared in the invention has the characteristics of high synthetic rate, product component uniformity and high vapor corrosion resistance.

Description

technical field [0001] The invention belongs to the technical field of refractory materials, in particular to an Al 4 SiC 4 Refractory materials and methods for their preparation. Background technique [0002] Ternary carbide Al 4 SiC 4 It has a high melting point (2037°C), high strength, and good chemical stability. It forms a stable mullite and corundum protective film on the surface under high-temperature oxidation conditions. It has good oxidation resistance and water vapor corrosion resistance. It is used in special refractory materials. The field has broad application prospects. At present, Al is usually synthesized by solid-state reaction at home and abroad. 4 SiC 4 , Wang Gang used Al, Si and carbon black / graphite as raw materials to prepare Al 4 SiC 4 [CN 101423215A]; Chen uses Al, Si and carbon black as raw materials, and processes them at 1800°C for 3h in an Ar atmosphere to obtain high-purity Al 4 SiC 4 [Chen J H, Zhang Z H, Mi W J, et al. 4 SiC 4 Pow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/66C04B35/56C04B35/622
CPCC04B35/56C04B35/622C04B35/66C04B2235/402C04B2235/428C04B2235/48
Inventor 顾华志陈定黄奥张美杰倪红卫
Owner WUHAN UNIV OF SCI & TECH
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