Al4SiC4 refractory material and preparation method thereof

Abstract

The invention relates to an Al4SiC4 refractory material and a preparation method thereof. Through the technical scheme, the preparation method comprises the following steps: adding metallic aluminum,monatomic silicon and an aluminum-silicon alloy into thermosetting phenolic resin, controlling the molar ratio of Al, Si to C to be (4: 1: 4) to (4: 1: 5), and stirring uniformly to obtain a premixedmaterial; then baking the premixed material at the temperature of 120 to 250 DEG C for 24 to 30 h, and then carrying out induction furnace treatment to obtain the Al4SiC4 refractory material. The Al4SiC4 refractory material prepared in the invention has the characteristics of high synthetic rate, product component uniformity and high vapor corrosion resistance.

Description

technical field

[0001] The invention belongs to the technical field of refractory materials, in particular to an Al 4 SiC 4 Refractory materials and methods for their preparation. Background technique

[0002] Ternary carbide Al 4 SiC 4 It has a high melting point (2037°C), high strength, and good chemical stability. It forms a stable mullite and corundum protective film on the surface under high-temperature oxidation conditions. It has good oxidation resistance and water vapor corrosion resistance. It is used in special refractory materials. The field has broad application prospects. At present, Al is usually synthesized by solid-state reaction at home and abroad. 4 SiC 4 , Wang Gang used Al, Si and carbon black / graphite as raw materials to prepare Al 4 SiC 4 [CN 101423215A]; Chen uses Al, Si and carbon black as raw materials, and processes them at 1800°C for 3h in an Ar atmosphere to obtain high-purity Al 4 SiC 4 [Chen J H, Zhang Z H, Mi W J, et al. 4 SiC 4 Pow...

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