Gallium nitride-based light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The present invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, wherein the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on the substrate. The active layer comprises a plurality of periodic structures stacked in sequence, and each of the periodic structures comprises a quantum well and a quantum barrier stacked in sequence; and a plurality of composite structures are inserted into the quantum barriers, and each of the composite structures comprisesa P-type doped gallium nitride layer, an undoped aluminum gallium nitride layer, and an N-type doped gallium nitride layer which are sequentially stacked. According to the technical scheme of the present invention, a plurality of composite structures are inserted into a quantum barrier layer, and each composite structure comprises a P-type doped gallium nitride layer, an undoped aluminum galliumnitride layer, and an N-type doped gallium nitride layer which are sequentially stacked, so that good two-dimensional electron gas can be formed, and the current expansion can be increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted widespread attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. Since civil lighting focuses on energy saving and service life of products, it is particularly critical to reduce the series resistance of LEDs and improve the antistatic ability of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-t...

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Problems solved by technology

[0006] Embodiments of the present invention provide a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, which can solve the problem of weak lateral expansion of carriers in semiconductor materials in the prior art, resulting in the gap between electrons and holes in the active layer. The problem of low compound efficiency

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