Multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and preparation method thereof

A technology of semiconductors and lasers, applied in the field of multi-ridge semiconductor lasers and their preparation, can solve the problems of beam quality deterioration, large spacing between ridges, and difficult elimination of thermal crosstalk, so as to reduce thermal crosstalk, increase output power, and realize The effect of high power output

Inactive Publication Date: 2019-03-19
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Abstract
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Problems solved by technology

However, in the above structures, there is a large distance between the ridges. When the distance between the ridges is too large, the quality of t

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  • Multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and preparation method thereof
  • Multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and preparation method thereof
  • Multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and preparation method thereof

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Embodiment Construction

[0028] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention, thereby enabling others skilled in the art to understand various implementations of the invention and various modifications as are suited to particular intended uses.

[0029] like figure 1 As shown, the multi-ridge semiconductor laser provided by this embodiment includes a substrate 2, an epitaxial structure 3 formed on the substrate 2, a plurality of ridges are formed on the upper part of the epitaxial structure 3, and the gap between the multi-ridges It is filled with fillers 6 , the number and position of the ohmic contact electrodes 4 correspond to the ridges one by one, and the top electrode 5 is connected to a plurality o...

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Abstract

The invention discloses a multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and a preparation method thereof. The multi-ridge type semiconductor laser comprises a substrate and an epitaxial structure including a lower limit layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limit layer and the like. The epitaxial structure includes a plurality of ridge portions; each ridge portion reaches the space below the active layer from the top of the epitaxial layer; and gaps among the ridge portions are filled with high-resistance low-thermal-conductivity low-refractive-index materials, so that active regions of all ridge portions are isolated mutually. And then ohmic contact electrodes are arranged at the upper parts of the ridge portions in a one-to-one correspondence manner and are provided with top electrodes for connection. With the multi-ridge type semiconductor laser, the mutual independence of electricity and light between the ridge portions is realized; and the thermal crosstalk among the ridges is reduced effectively. Therefore, a solution idea is provided for obtaining a high power laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a multi-ridge type semiconductor laser which reduces inter-ridge crosstalk and a preparation method thereof. Background technique [0002] Due to the advantages of high electro-optical conversion efficiency, good spectral purity, small size, and high reliability, semiconductor lasers have broad application prospects in military and civilian fields such as laser guidance, laser ranging, laser printing, and laser communication. Among them, GaN-based lasers of the hundred milliwatt level have been successfully applied to optical disc information storage technology. However, application fields such as laser display and underwater communication put forward higher requirements on the output power of GaN lasers. [0003] For a single laser tube, adopting a multi-ridge structure is a method to obtain high output power. Solving the thermal crosstalk between differe...

Claims

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Application Information

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IPC IPC(8): H01S5/22
CPCH01S5/22
Inventor 杨浩军王文杰谢武泽李沫李俊泽邓泽佳廖明乐罗惠文
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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