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Light emitting diode chip and preparation method thereof

A technology of light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effect of reducing energy efficiency loss

Active Publication Date: 2019-03-22
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The embodiment of the present invention provides a light-emitting diode chip and its preparation method, which can solve the problem of fixing the light-emitting diode chip on the heat dissipation base in the prior art, and effectively reduce the energy efficiency loss caused by the thermal effect under high current.

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  • Light emitting diode chip and preparation method thereof
  • Light emitting diode chip and preparation method thereof
  • Light emitting diode chip and preparation method thereof

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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0037] An embodiment of the present invention provides a light emitting diode chip. figure 1 It is a schematic structural diagram of a light emitting diode chip provided by an embodiment of the present invention. see figure 1 , the light emitting diode chip includes a light emitting diode chip 10 , a boron arsenide film 20 and a heat dissipation base 30 . The boron arsenide thin film 20 is laid on the heat dissipation base 30 and bonded with the LED chip 10 .

[0038] figure 2 Schematic diagram of the structure of the light-emitting diode chip provided by the embodiment of the present invention. see figure 2 , in this embodiment, the LED chip 10 includes a substrate 11, an N-type semiconductor layer 12, an active layer 13, a P-t...

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Abstract

The invention discloses a light emitting diode chip and a preparation method thereof, and belongs to the technical field of semiconductors. The light emitting diode chip comprises a light emitting diode core particle and a heat dissipation base, wherein the light emitting diode core particle includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a P-type electrode and an N-type electrode, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially laminated on the substrate, the P-type semiconductor layer isprovided with a groove extending to the N-type semiconductor layer, the N-type electrode is arranged on the N-type semiconductor layer in the groove, and the P-type electrode is arranged on the P-typesemiconductor layer. The light emitting diode further comprises a boron arsenide film, wherein the boron arsenide film is laid on the heat dissipation base and bonded with the light emitting diode core particle. The light emitting diode chip can effectively reduce the energy efficiency loss caused by a thermal effect under high current.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The primary product in the preparation process of the light-emitting diode is an epitaxial wafer. The epitaxial wafer and electrodes fabricated on the epitaxial wafer form a light-emitting diode chip, and the light-emitting diode chip is arranged on a heat dissipation base to form a light-emitting diode chip. [0003] Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. The current pre...

Claims

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Application Information

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IPC IPC(8): H01L33/64H01L33/60
CPCH01L33/60H01L33/641H01L2933/0075
Inventor 郭炳磊葛永晖肖杨吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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