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Epitaxial structure for anti-radiation power MOSFETs and manufacturing method thereof

A technology of epitaxial structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as affecting VDMOSRdson, improve radiation resistance, lower the chance of breakdown, and improve secondary breakdown. Effect

Inactive Publication Date: 2019-03-26
无锡浩真微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the Rdson of VDMOS is affected due to the increase of the epitaxial layer

Method used

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  • Epitaxial structure for anti-radiation power MOSFETs and manufacturing method thereof

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] Please refer to figure 1 , which shows a structural schematic diagram of the epitaxial structure of a radiation-hardened power MOSFET, as figure 1 As shown, the epitaxial structure includes a back seal layer 1, a silicon substrate 2, a buffer epitaxial layer 3 and a secondary epitaxial layer 4, the back seal layer 1 is arranged on the back side of the silicon substrate 2, and the silicon The buffer epitaxial layer 3 is disposed on the front side of the substrate 2 , and the secondary epitaxial layer 4 is disposed on the buffer epitaxial layer 3 .

[0029] The back side and the front side of the silicon substrate 2 mentioned in this embodiment are two opposite sides of the silicon substrate 2 respectively, and in actual implemen...

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Abstract

The invention discloses an epitaxial structure for anti-radiation power MOSFETs and a manufacturing method thereof. The epitaxial structure comprises a back seal layer, a silicon substrate, a buffer epitaxial layer and a secondary epitaxial layer. The back seal layer is arranged on the back of the silicon substrate. The buffer epitaxial layer is arranged on the front of the silicon substrate. Thesecondary epitaxial layer is arranged on the buffer epitaxial layer. The peak electric field of the transmission region between the epitaxial layer and the silicon substrate is lower than that of thesecondary breakdown, and the secondary breakdown of induced NPN tubes is improved.

Description

technical field [0001] The invention relates to the field related to VDMOS products suitable for space or aerospace applications, in particular to an epitaxial structure and a manufacturing method of a radiation-resistant power MOSFET. Background technique [0002] VDMOS transistors of various voltage and current classes are the devices of choice for high-frequency switching power supplies, and they are currently used in a variety of power control and conversion applications in space and aerospace systems. In addition, in outer space applications such as communication satellites, weather satellites, GPS (Global Positioning System) and earth observation satellites, power MOSFETs are widely used due to their high switching speed, low conduction loss, and small space occupation. [0003] Special requirements for MOS (Metal Oxide Semiconductor) devices operating in outer space are long-term reliability and high tolerance to ionizing radiation, energetic particles and others. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0619H01L29/66712H01L29/7803
Inventor 赵建坤罗志勇赵丽新
Owner 无锡浩真微电子有限公司