A kind of preparation method of thin film transistor array substrate

Abstract

A method for preparing a thin film transistor array substrate. The method comprises the step of: after forming a Cu metal thin film layer on a gate insulating layer and before a yellow light process and an etching process, depositing a C film layer above the Cu metal thin film layer. In the embodiments of the present invention, the Cu film surface electrical resistivity is reduced, preventing the phenomenon of ESD produced by the Cu film and improving the display effects of the thin film transistor array substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a thin film transistor array substrate. Background technique [0002] With the development of flat panel display technology, people's pursuit of display size, resolution and picture refresh rate is getting higher and higher, so copper is used instead of aluminum as the conductive metal material. [0003] In the existing array substrate process method, after the Cu film is deposited, after the yellow light process and the etching process, it is exposed to the air, and the Cu on the surface layer will be partially oxidized, and the Cu film is exposed to the air for more than 30 minutes. Its surface resistivity will increase by more than 30%, which will cause the resistivity of Cu line to increase; and the CuO produced on the Cu film x and Cu(OH) x It will lead to Electro-Static discharge (ESD) phenomenon and affect the display effect of TFT ...

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Problems solved by technology

[0003] In the existing array substrate process method, after the deposition of the Cu film, it is exposed to the air through the yellow light process and the etching process, and the Cu on the surface layer will be partially oxidized, and the Cu film is exposed to the air for more than 30 minutes. Its surface resistivity will increase by more than 30%, which will cause the resistivity of Cu line to increase; and the CuO produced on the Cu film x and Cu(OH) x It will lead to Electro-Static discharge (ESD) phenomenon and affect the display effect of TFT devices; the thicker the Cu film, the larger the grain size, the larger the surface roughness, and the larger the gaps in the grain boundaries , so in the follow-up process, there will be some O 2 and H 2 O penetrates into the film along the grain boundary gap, accelerates the oxidation of the surface Cu film, produces electrostatic breakdown or local parasitic capacitance, and further affects the display effect of TFT devices

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