Silicon carbide trench-type field oxide power MOS device with protective layer and heterojunction diode

A technology of MOS devices and protective layers, which is applied in the direction of diodes, semiconductor devices, electric solid devices, etc., can solve problems such as device oscillations, achieve the effects of reducing on-resistance, reducing manufacturing costs, and eliminating annealing temperature differences

Inactive Publication Date: 2019-03-29
CHONGQING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of high-speed switching of silicon carbide, the small parasitic inductance will also bring unnecessary oscillation to the device

Method used

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  • Silicon carbide trench-type field oxide power MOS device with protective layer and heterojunction diode
  • Silicon carbide trench-type field oxide power MOS device with protective layer and heterojunction diode
  • Silicon carbide trench-type field oxide power MOS device with protective layer and heterojunction diode

Examples

Experimental program
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Embodiment Construction

[0026] Preferred embodiments of the present invention will be described in detail below. For the experimental methods that do not specify specific conditions in the examples, usually follow the conventional conditions or the conditions suggested by the manufacturer.

[0027] A silicon carbide trench field oxygen power MOS device with a protective layer and a heterojunction diode, the structure of which is as follows image 3 As shown, 1 is the N-type substrate layer, 2 is the N-type drift region, 3 is the N-type carrier diffusion region, 4 is the P-type channel layer, 5 is the N-type source region, 6 is the gate oxide layer, and 7 is the The gate polysilicon, 8 is the source polysilicon, 9 is the P protection layer, 10 is the source metal, and 11 is the drain metal.

[0028] A silicon carbide trench type field oxygen power MOS device with a protective layer and a heterojunction diode, the MOS device includes drain metal 11, N-type substrate layer 1, N-type drift region 2, N ...

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PUM

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Abstract

The invention discloses a silicon carbide trench-type field oxide power MOS device with a protective layer and a heterojunction diode. On the one hand, on the basis of a conventional groove-type fieldoxide device, a groove-type gate electrode and a groove-type source electrode share a P-type protection layer, so that the cell width can be effectively reduced, and the on-resistance of the device in an on state is effectively reduced; on the other hand, a heterojunction Schottky diode structure is adopted; namely, polycrystalline silicon is in direct contact with silicon carbide, thereby solving the problem of uncontrollable reliability of a Schottky barrier caused by the Schottky metal annealing temperature difference while reducing the manufacturing cost of the device, reducing the process manufacturing difficulty of the silicon carbide groove type field oxide device with the diode structure and alleviating the problem between the breakdown voltage and the on-resistance of the MOS device.

Description

technical field [0001] The invention belongs to the field of semiconductor power devices, in particular to a silicon carbide groove type field oxygen power MOS device with a protective layer and a heterojunction diode. Background technique [0002] Silicon carbide power devices have been widely used in power systems because of their electrical characteristics such as high withstand voltage, low on-resistance, and fast turn-off. Although their excellent electrical characteristics have been verified in many power system applications, high chip cost and reliability issues still limit their position to replace Si IGBTs. The reliability of the gate oxide layer is one of the focal issues that people have been paying attention to for a long time, and many solutions have been proposed to alleviate this contradiction. Among them, placing a P-type protective layer under the groove-type field oxygen structure is considered to be able to effectively alleviate this problem. One of the c...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/08H01L29/417H01L29/423H01L29/78H01L29/872H01L27/06
CPCH01L29/7827H01L27/0629H01L29/0684H01L29/0847H01L29/41741H01L29/4236H01L29/872
Inventor 胡盛东安俊杰
Owner CHONGQING UNIV
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