Silicon carbide trench-type field oxide power MOS device with protective layer and heterojunction diode
A technology of MOS devices and protective layers, which is applied in the direction of diodes, semiconductor devices, electric solid devices, etc., can solve problems such as device oscillations, achieve the effects of reducing on-resistance, reducing manufacturing costs, and eliminating annealing temperature differences
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[0026] Preferred embodiments of the present invention will be described in detail below. For the experimental methods that do not specify specific conditions in the examples, usually follow the conventional conditions or the conditions suggested by the manufacturer.
[0027] A silicon carbide trench field oxygen power MOS device with a protective layer and a heterojunction diode, the structure of which is as follows image 3 As shown, 1 is the N-type substrate layer, 2 is the N-type drift region, 3 is the N-type carrier diffusion region, 4 is the P-type channel layer, 5 is the N-type source region, 6 is the gate oxide layer, and 7 is the The gate polysilicon, 8 is the source polysilicon, 9 is the P protection layer, 10 is the source metal, and 11 is the drain metal.
[0028] A silicon carbide trench type field oxygen power MOS device with a protective layer and a heterojunction diode, the MOS device includes drain metal 11, N-type substrate layer 1, N-type drift region 2, N ...
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