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Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation

A technology of ion implantation and buffer layer, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing the conductivity of the buffer layer and affecting the electrical performance of the device

Active Publication Date: 2019-04-02
RAYTHEON CO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These impurities can reduce the conductivity of the buffer layer, but they can also negatively affect the performance of devices fabricated from the crystalline semiconductor device layer by reducing the carrier concentration in the crystalline semiconductor device layer or by undesired charge trapping during device operation. electrical properties

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  • Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation
  • Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation
  • Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation

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Embodiment Construction

[0026] now refer to Figure 1A , single crystal substrate 12 (here such as silicon carbide (SiC), silicon (Si) or sapphire (Al 2 o 3 )) has a single crystal buffer layer 14 epitaxially deposited on the upper surface of the single crystal substrate 12 . The buffer layer 14 may comprise one or more III-nitride materials such as aluminum nitride (AlN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium aluminum nitride (InAlN), Indium Gallium (InGaN)), and the buffer layer 14 is grown on top of the single crystal substrate 12. The buffer layer 14 is typically grown to a thickness of more than 1 micron to allow the material to relax during growth and to reduce as many defects as possible. Here, the buffer layer 14 is, for example, gallium nitride (GaN), which has, for example, about 10 15 to 10 16 / cm 3 background electron carrier concentration.

[0027] Ion implantation protection layer 16 is deposited on the surface of the upper surface of buffer layer 14 . ...

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Abstract

A method includes providing a single crystal substrate having a buffer layer on a surface of the substrate. The buffer layer provides a transition between the crystallographic lattice structure of thesubstrate and the crystallographic lattice structure of the semiconductor layer and has its resistivity increased by ion implanting a dopant into the buffer layer; and forming semiconductor layer onthe ion implanted buffer layer. The semiconductor layer may be a wide bandgap semiconductor layer having a high electron mobility transistors formed therein.

Description

technical field [0001] The present disclosure relates generally to methods and structures having Ill-nitride buffer layers, and more particularly to methods and structures having high-resistivity Ill-nitride buffer layers. Background technique [0002] As is known in the art, III-nitrides are used in many semiconductor devices. Group III nitrides include indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN), boron nitride (BN) and all related alloys (including In x (Al y Ga 1-y ) 1-x N (where 0≤x≤1 and 0≤y≤1) and B z (In x (Al y Ga 1-y ) 1-x ) 1-z A family of materials for N (where 0≤x≤1 and 0≤y≤1 and 0≤z≤1)). Electronic devices typically use Ill-nitride materials to exploit the polarization mismatch that occurs when two different Ill-nitride materials are epitaxially bonded together to generate electrically active carriers at the resulting heterojunction. [0003] Also as known in the art, in many applications these III-nitrides are grown on substra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/265
CPCH01L21/02378H01L21/02381H01L21/0242H01L21/02458H01L21/0254H01L21/2654H01L29/7786H01L29/2003H01L29/66462H01L29/66318H01L29/7787H01L29/36H01L29/207
Inventor K·黄B·D·舒尔茨A·克尔
Owner RAYTHEON CO