Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming protective layers on surface of object and product with protective layers formed on surface

A technology of object surface and protective layer, which is applied in the direction of surface coating liquid device, pretreatment surface, coating, etc., can solve the problem of poor bonding force between the protective polymer layer and the object surface, so as to improve the bonding force and improve the The effect of protecting the lifespan

Inactive Publication Date: 2019-04-26
上海稷以科技有限公司
View PDF11 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing technology of forming a protective polymer layer on the surface of an object by using plasma containing a polymer, there are weak ability to prevent the object from being touched by a liquid on the surface, and the bonding force of the protective polymer layer to the surface of the object is poor, etc. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming protective layers on surface of object and product with protective layers formed on surface
  • Method for forming protective layers on surface of object and product with protective layers formed on surface
  • Method for forming protective layers on surface of object and product with protective layers formed on surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0114] 100 transistors were placed in the plasma chamber, the chamber was evacuated to a base pressure of 3-10 mTorr, and then helium gas was passed into the chamber at 20 sccm until the pressure reached 80 mTorr. Continuous power plasma was then induced using RF at 13.56 MHz, 300 W for 5 minutes.

[0115] Next, p-trifluorotoluene vapor was introduced into the chamber at a rate of 120 mg / min, and the plasma was switched to the following pulsed plasma: peak power 100 W, frequency 50 Hz, duty cycle 5 %. The ditrifluorotoluene ionizes and reacts with itself to form a continuous and uniform first protective layer on the surface of the transistor. After 15 minutes, the plasma power was turned off and the p-trifluorotoluene vapor supply was stopped.

[0116] Maintain the vacuum in the chamber, introduce 1H,1H,2H,2H-perfluorodecyl acrylate vapor into the chamber at a rate of 120 mg / min, and switch the plasma to the following pulsed plasma: peak The power is 150W, the frequency is ...

Embodiment 2

[0119] 100 transistors were placed in the plasma chamber, the chamber was evacuated to a base pressure of 3-10 mTorr, and then helium gas was passed into the chamber at 20 sccm until the pressure reached 80 mTorr. Continuous power plasma was then induced using RF at 13.56 MHz, 300 W for 5 minutes.

[0120] Next, p-ditrifluorotoluene vapor was introduced into the chamber at a rate of 120 mg / min, and the plasma was switched to the following pulsed plasma: peak power 100 W, frequency 100 Hz, duty cycle 5 %. The ditrifluorotoluene ionizes and reacts with itself to form a continuous and uniform first protective layer on the surface of the transistor. After 15 minutes, the plasma power was turned off and the p-trifluorotoluene vapor supply was stopped.

[0121] Maintain the vacuum in the chamber, introduce hexafluoropropylene vapor into the chamber at a rate of 120 mg / min, and switch the plasma to the following pulsed plasma: the peak power is 100W, the frequency is 100Hz, and the...

Embodiment 3

[0125] 100 knitted gloves were placed in the plasma chamber, the chamber was evacuated to a base pressure of 3-10 mTorr, and then nitrogen gas was passed into the chamber at 20 sccm until the pressure reached 80 mTorr. Continuous power plasma was then induced using RF at 13.56 MHz, 300 W for 5 minutes.

[0126] Next, 1,2,4-trimethylbenzene vapor was introduced into the chamber at a rate of 120 mg / min, and the plasma was switched to the following pulsed plasma: peak power 100 W, frequency 50 Hz, duty cycle The ratio is 25%. The 1,2,4-trimethylbenzene ionizes and reacts with itself to form a continuous and uniform first protective layer on the surface of the transistor. After 15 minutes, the plasma power was turned off and the supply of 1,2,4-trimethylbenzene vapor was stopped.

[0127] Maintain the vacuum in the chamber, introduce 1H,1H,2H,2H-perfluorodecyl acrylate vapor into the chamber at a rate of 120 mg / min, and switch the plasma to the following pulsed plasma: peak The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for forming protective layers on the surface of an object. The method comprises the steps that at least part of the surface of the object is exposed in first plasma, sothat the first protective layer is formed on the at least part of the surface of the object; and the at least part of the surface, where the first protective layer is formed, of the object is exposedin second plasma, so that the second protective layer is formed. The invention further provides a product with protective layers formed on the surface. The protective layers include the first protective layer and the second protective layer. The first protective layer is formed on the at least part of the surface of the product by exposing the at least part of the surface of the product in firstplasma. The second protective layer is formed on the outer surface of the first protective layer by exposing the at least part of the surface, where the first protective layer is formed, of the product in second plasma.

Description

technical field [0001] The invention relates to a method for forming a protective layer on the surface of an object and a product with the protective layer formed on the surface. Background technique [0002] In people's production and daily life, it is often necessary to prevent the objects used by them from being touched by liquids (water, oil, aqueous solution or other mixed liquids containing water and oil, etc.), causing the objects to be polluted, wetted, or because of These liquids act to cause damage to objects. Here, the objects people use are products. Examples of products include electrical equipment, electronic equipment, filtration membranes, watches, and wearable products. [0003] In the existing technology of preventing objects from being contacted by liquids, it is disclosed that a protective polymer layer is formed on the surface of objects by using plasma containing polymers. For example, Chinese patent application number CN200780002557 discloses a prote...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B05D3/14D06M10/08
CPCB05D3/141D06M10/08
Inventor 杨平王俊林捷
Owner 上海稷以科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com