High heat dissipation silicon-based package substrate and manufacturing method thereof and high heat dissipation package structure

Abstract

The invention provides a high heat dissipation silicon-based package substrate, which includes a silicon base. A plurality of vertical through-holes are formed in the silicon base longitudinally, thevertical through-holes penetrate through the upper surface and the lower surface of the silicon base, electric and heat conducting columns are arranged in the vertical through-holes, both ends of theelectric and heat conducting columns are exposed to the upper surface and the lower surface of the silicon base, electrical isolation layers are arranged on the outer side walls of the electric and heat conducting columns, and the diameter range of the vertical through-holes is 50-200 [mu]m. The high heat dissipation silicon-based package substrate has the advantages of high heat dissipation module integration level, small volume, low cost, and being facilitated to application of a package structure. Furthermore, the invention further provides a manufacturing method of the high heat dissipation silicon-based package substrate and the package structure based on the manufacturing method.

Description

technical field [0001] The invention belongs to the technical field of packaging, and in particular relates to a silicon-based packaging substrate with high heat dissipation, a manufacturing method thereof, and a packaging structure based on the silicon-based packaging substrate with high heat dissipation. Background technique [0002] With the development of integrated circuit chips in the direction of high power consumption and high frequency, higher requirements are placed on packaging technology. Not only does the packaging structure have excellent electrical properties, it also needs to have good heat dissipation performance to ensure the long-term performance of the chip. work steadily. [0003] For the packaging of the integrated circuit chip, it is necessary to connect the integrated circuit chip to the packaging substrate to realize the electrical interconnection between the chip and the outside world. The traditional packaging substrate is prepared by PCB technolo...

AI Technical Summary

Problems solved by technology

However, the thermal conductivity of the PCB board is only 0.2-0.8W / m·K, it is difficult to export the heat emitted by the integrated circuit chip, and it is easy to cause reliability problems

Although a metal heat sink can be introduced into the packaging structure to solve the heat dissipation problem of the integrated circuit chip, such as a metal copper heat sink with a thermal conductivity of 387.6W / m K, but this traditional heat dissipation structure not only makes the size of the integrated circuit chip Larger and difficult to shrink further, also increases manufacturing cost

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