Semiconductor structure and manufacturing method thereof

Abstract

The present invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a through hole penetrating through a dielectric layer in a height direction of the semiconductor structure. The through hole interconnects the front device of the semiconductor structure with the rear metal line of the semiconductor structure. By performing a first etching process and a second etching process, the cross section of the formed through hole orthogonal to the height direction has a first dimension in the extending direction of the rear metal line greater than a second dimension in the direction perpendicular to the extending direction. According to the through hole structure formed by the manufacturing method provided by the present invention, the feature size of the through hole in the second direction is unchanged and the feature size of the through hole in the first direction can be increased when a photomask is not modified, thereby reducingthe resistance value of a metal contact located in the through hole, and avoiding a short circuit in the second direction.

Description

technical field [0001] The invention relates to a semiconductor structure and a manufacturing method thereof, in particular to designing a through-hole structure and a manufacturing method thereof. Background technique [0002] Since the early days when Dr. Jack Kilby of Texas Instruments invented the integrated circuit, scientists and engineers have made numerous inventions and improvements in semiconductor devices and processes. Over the past 50 years, there has been a significant reduction in the size of semiconductors, which translates into ever-increasing processing speeds and ever-decreasing power consumption. So far, the development of semiconductors has roughly followed Moore's Law, which roughly states that the number of transistors in a dense integrated circuit doubles about every two years. Now, the semiconductor process is developing below 28nm, and some companies are working on the 14nm process. Here is just a reference, a silicon atom is about 0.2nm, which me...

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Problems solved by technology

However, due to the particularity of the position of the Kelvin via, which is located in the turning area, unauthorized modification of the characteristic size of the Kelvin via requires a large number of changes to the layout design of the entire semiconductor device, which increases the cost of the semiconductor device manufacturing process

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