A kind of recessed anode plane Gunn diode and its manufacturing method

Abstract

The invention relates to a grooved anode planar Gunn diode, comprising a substrate, a nucleating layer, a back barrier layer, a channel layer, a barrier layer, an anode, a cathode and a dielectric layer, wherein the nucleating layer is located on the substrate; the back barrier layer is located on the nucleating layer; the channel layer is located on the back barrier layer; the barrier layer is located on the channel layer; grooves are arranged on the barrier layer and the channel layer, and the grooves divide 2DEG channels formed by the channel layer and the barrier layer into a first 2DEG channel and a second 2DEG channel; the anode is located in the grooves and on the barrier layer; the cathode is located on the back barrier layer; and the dielectric layer is located on the barrier layer. According to the embodiment of the invention, the grooves are utilized to form two parallel planar Gunn diodes, the movement of electronic domains in the channels is changed by changing the lengthsof the two channels, the free control of the operating frequency and the output power of devices is realized, and the scheme has great significance to the research of improving the operating frequency and the output power of the devices.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a grooved anode plane Gunn diode and a manufacturing method thereof. Background technique [0002] Gunn diode devices or electron transfer devices (TEDs) are considered to be excellent microwave and lower millimeter wave (30GHz-100GHz) signal source devices, and have been recognized by more and more people since they were first confirmed by J.B. Gunn in 1963 focus on. Compared with traditional signal source devices, such as klystrons, magnetrons, and return wave oscillators, Gunn diodes are smaller in size, simpler in structure, and lower in power consumption. In the development of more than 50 years, Gunn diode has become one of the most widely used microwave signal sources, widely used in industry, science, medical and military fields. [0003] In the study of Gunn diodes, planar Gunn devices have gradually attracted attention. Due to the strong piezoelectric polari...

AI Technical Summary

Problems solved by technology

[0004] The frequency expression of the Gunn diode is: f=v sat / L, where v sat is the electron saturation speed, and L is the channel length, so the most direct way to increase the frequency is to shorten the channel length L; however, if the channel is too short, the supported external working bias will also become lower, although the frequency is increased, But the corresponding output power is greatly reduced

In the prior art, there are two types of new structures that can improve the operating frequency and output power of Gunn devices, one is an ultra-short multi-channel structure based on multiple AlGaN (AlInN or AlN) / GaN heterojunctions, and Limited by the current technology level, as the number of channels increases, the process difficulty increases and the material quality also decreases; the other type is the harmonic enhanced structure, which improves the device structure by improving the long channel device structure. The nonlinearity of the oscillation produces higher harmonic frequencies, thereby realizing the high frequency of the Gunn device, but the higher the harmonic frequency, the output power of the device will be seriously degraded

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