A semiconductor device and method of making the same
A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve problems such as changes in the electrical properties of floating gate devices, and achieve the effect of improving electrical properties
Active Publication Date: 2021-02-23
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] Since the floating gate made by the self-alignment process is defined by the pattern of the active area, it is necessary to change the pattern of the active area when making a lead on the floating gate, but after changing the pattern of the active area, there are The characteristic size of the source region is significantly larger than the characteristic size of the active region under its contact hole; in addition, due to the change of the pattern of the active region, the electrical performance of the traditional floating gate device will change
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[0052] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0053] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0054] It will be understood that when an element or layer is referred t...
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Abstract
The present invention provides a semiconductor device and a manufacturing method thereof. The method includes: providing a semiconductor substrate, the semiconductor substrate includes a flash memory device region and a floating gate device region, and a patterned hard mask is formed on the semiconductor substrate. film layer; using the patterned hard mask layer as a mask to form a number of shallow trench isolation structures in the semiconductor substrate, the top surface of the shallow trench isolation structure and the top surface of the hard mask layer The surface is even; etching back part of the shallow trench isolation structure of the floating gate device region to form a groove for accommodating part of the floating gate; removing the hard mask layer to expose the semiconductor substrate; A tunnel oxide layer and a floating gate are sequentially formed on the semiconductor substrate, and the floating gate located in the floating gate device region includes a floating gate part located in the groove. The invention removes a part of the shallow trench isolation structure of the floating gate device region by etching back, avoids changing the shape of the active region, and forms an ideal floating gate device with good electrical performance.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have resulted in more and more high-density various type memory. Random access memory, such as DRAM and SRAM (static random access memory), has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. [0003] Flash memory, or FLASH, is the mainstream of non-volatile semiconductor storage technology. Among various FLASH devices, the flash memory with ETOX (EPROM Tunnel Oxide) structure is currently more popular, that is, a floating memory surrounded by six sides of a dielectr...
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IPC IPC(8): H01L27/11521H01L27/11548H01L27/11526H10B41/30H10B41/40H10B41/50
Inventor 尹卓李智睿
Owner SEMICON MFG INT (SHANGHAI) CORP