Fabrication method of photoelectric diode and photoelectric diode

Abstract

The invention provides a fabrication method of a photoelectric diode and the photoelectric diode. The fabrication method comprises the steps of S101, forming an oxide layer on a substrate; S102, forming two first grooves in the oxide layer at intervals, and forming first injection regions at the bottoms of the two first grooves; S103, forming a first opening, two second grooves and a second opening in the substrate, and injecting ions to corresponding positions to form a second injection region, a third injection region and a fourth injection region, wherein the second opening is arranged between the two second grooves; S104, removing the oxide layer, and forming dielectric layers on the substrate; S105, performing etching on the dielectric layers on the first injection region and the third injection region to form contact holes, and forming metal layers in the dielectric layers and the contact holes; and S106, coating photoresist layers on upper surfaces and two sides of the metal layers, etching and removing the dielectric layers which are not covered by the photoresist layers, removing the photoresist layers, and finally obtaining the photoelectric diode. The invention also provides the photoelectric diode, and the surface state and the reliability are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing processes, in particular to a preparation method of a photodiode and a photodiode. Background technique [0002] Ordinary diodes are in a cut-off state when reverse voltage is applied, and only a weak reverse current can flow. When designing and manufacturing photodiodes, try to make the area of ​​the PN junction relatively large in order to receive incident light. The photodiode works under the action of reverse voltage. When there is no light, the reverse current is extremely weak, which is called dark current; when there is light, the reverse current rapidly increases to tens of microamps, which is called photocurrent. The greater the intensity of the light, the greater the reverse current. The change of light causes the photodiode current to change, which can convert the light signal into an electrical signal and become a photoelectric sensor device. [0003] At pres...

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Problems solved by technology

[0003] At present, according to different performance parameters of photodiodes, they are applied to different fields. In the actual preparation process of photodiodes, mutual dissolution between metals and semiconductors often occurs when etching metals, resulting in contamination or damage to photodiodes. This greatly affects the surface state of the photodiode and reduces the reliability of the photodiode

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