Solar blind ultraviolet photodetector based on beta-Ga2O3/FTO heterojunction

An electric detector, -ga2o3 technology, applied in the field of optics, can solve problems such as FTO performance damage

Active Publication Date: 2019-05-14
北京镓和半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] When FTO exceeds 550°C, the fluorine element inside will be released, resulting in the destruction of FTO performance

Method used

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  • Solar blind ultraviolet photodetector based on beta-Ga2O3/FTO heterojunction
  • Solar blind ultraviolet photodetector based on beta-Ga2O3/FTO heterojunction

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Embodiment 1

[0035] see figure 1 The illustration, the present invention proposes a β-Ga based 2 o 3 Solar-blind UV photodetectors with FTO heterojunctions including β-Ga with self-supporting properties 2 o 3 Film, FTO conductive glass and electrodes, the area of ​​FTO conductive glass is larger than the β-Ga 2 o 3 film area, the β-Ga 2 o 3 The thin film is placed on the FTO conductive glass to form a heterojunction, and the β-Ga 2 o 3 An electrode is respectively arranged on the thin film and the FTO conductive glass.

[0036] Specifically in this embodiment, the β-Ga 2 o 3 The film thickness is 360 nm.

[0037] The electrode is an In electrode, and the diameter of the electrode is 1 mm. The electrodes are connected with an external power supply, and the voltage of the external power supply is 15V.

[0038] This embodiment further provides a preparation method of the solar-blind ultraviolet photodetector.

[0039] First take a Si single crystal substrate with a size of 10mm×...

Embodiment 2

[0046] A β-Ga based 2 o 3 Solar-blind UV photodetectors with FTO heterojunctions including β-Ga with self-supporting properties 2 o 3 film, FTO conductive glass and electrodes, the β-Ga 2 o 3 The thin film is placed on the FTO conductive glass to form a heterojunction, and the β-Ga 2 o 3 An electrode is respectively arranged on the thin film and the FTO conductive glass.

[0047] Specifically in this embodiment, the β-Ga 2 o 3 The film thickness was 330 nm.

[0048] The electrode is an In electrode, and the diameter of the electrode is 1 mm. The electrodes are connected with an external power supply, and the voltage of the external power supply is 25V.

[0049] This embodiment further provides a preparation method of the solar-blind ultraviolet photodetector.

[0050] First take a Si single crystal substrate with a size of 10mm×5mm×0.5mm and soak it in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and f...

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Abstract

The invention provides a solar blind ultraviolet photodetector based on a beta-Ga2O3 / FTO heterojunction, comprising a beta-Ga2O3 film, an FTO conductive glass and an electrode, wherein the beta-Ga2O3film is placed on the FTO conductive glass to form a heterojunction, and an electrode is disposed on each of the beta-Ga2O3 film and the FTO conductive glass. The invention also proposes a preparationmethod and application of a solar blind ultraviolet photodetector based on a beta-Ga2O3 / FTO heterojunction. The solar blind ultraviolet photodetector based on a beta-Ga2O3 / FTO heterojunction proposedby the invention can effectively penetrate the visible light while effectively detecting UVC signals and effectively filtering part of the UVB and UVA light. The invention provides theoretical and technical support for the application of the solar blind ultraviolet photodetector based on a beta-Ga2O3 / FTO heterojunction.

Description

technical field [0001] The invention belongs to the field of optical technology, in particular to a beta-Ga based 2 o 3 and FTO heterojunction solar-blind UV detectors. Background technique [0002] Solar-blind ultraviolet light refers to deep ultraviolet light with a wavelength between 200-280nm. Due to being absorbed by the ozone layer, the atmosphere below the ozone layer lacks 200-280nm band light. Detection of signals in this band is known as solar-blind UV detection. Since the electromagnetic waves in this band are not affected by the sunlight background, the detection sensitivity of solar-blind ultraviolet light signals is extremely high, and the communication accuracy rate of working in this band is also high. It is widely used in military, aerospace and other fields. In addition to the application in solar-blind ultraviolet communication, solar-blind ultraviolet photodetectors have other applications, such as national defense early warning and tracking, life scie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18
CPCY02P70/50
Inventor 王霞李培刚唐为华
Owner 北京镓和半导体有限公司
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