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Nitride light emitting diode

A technology of light-emitting diodes and nitrides, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of decreased luminous efficiency of nitride light-emitting diodes, easy overflow of electrons, etc. If the value is too high, the effect of improving the luminous efficiency

Active Publication Date: 2019-05-17
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a nitride light-emitting diode, which solves the problem in the prior art that because electrons have a much faster mobility than holes, electrons easily overflow the active layer, causing nitrogen Luminous Efficiency Decrease of Compound Light-Emitting Diodes

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  • Nitride light emitting diode
  • Nitride light emitting diode

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Embodiment 1

[0023] Embodiment 1, as figure 1 As shown, a nitride light-emitting diode includes a substrate 100, a buffer layer 200, a non-doped nitride layer 300, an n-type nitride layer 400, an active layer 500, and an electron blocking layer sequentially located on the substrate 100. 600 and a p-type nitride layer 700, wherein: the active layer 500 is a multi-quantum well structure formed by alternately stacking several well layers 510 and barrier layers 520, and the several are positive integers greater than 2, so The barrier layer 520 is composed of a nitride barrier layer 521 and a silicon nitride barrier layer 522 .

[0024] Such as figure 2 As shown, this embodiment proposes the preparation process of nitride light-emitting diodes, and the specific preparation process steps are as follows:

[0025] Step S1: providing a sapphire substrate 100, putting the sapphire substrate 100 into a washing machine for pickling and rinsing with deionized water in sequence, and finally drying wi...

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Abstract

The invention discloses a nitride light emitting diode comprising a substrate, and a buffer layer, an undoped nitride layer, an n-type nitride layer, an active layer, an electron blocking layer and ap-type nitride layer sequentially disposed on the substrate, wherein the active layer is in a multi-quantum well structure formed by alternately stacking a plurality of well layers and barrier layers,the number is a positive integer greater than 2, and the barrier layer is composed of a nitride barrier layer and a silicon nitride barrier layer. The nitride light emitting diode has the advantagesthat a nitride barrier layer and a silicon nitride barrier layer are used as barrier layers in the active layer, and the silicon nitride barrier layer with wide band gap (to 5eV) and thin thickness (less than or equal to 3nm) is provided in the barrier layer to, at one hand, suppress the electron overflowing of the active layer and improve the luminous efficiency of the nitride light emitting diode device, and on the other hand, avoid the resistance of the barrier layer being too high and prevent the operation voltage of the nitride light emitting diode device rising abnormally.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a nitride light emitting diode. Background technique [0002] Light-emitting diodes (LEDs), as a high-efficiency, high-reliability solid-state lighting component, have gradually replaced traditional lighting sources and become the mainstream of the market. At present, the source of white light for LED lighting is mainly to use blue nitride light-emitting diodes to excite yellow phosphors for light mixing, and the epitaxial structure of nitride light-emitting diodes is generally on an epitaxial substrate, and sequentially prepare a buffer layer, a non-doped nitride layer, N-type nitride layer, active layer, electron blocking layer and p-type nitride layer, wherein the active layer is a multi-quantum well structure, which is usually stacked alternately by several well layers of indium gallium nitride and barrier layers of gallium nitride Formed, the active layer can realize...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/06H01L33/14H01L33/12H01L33/00
Inventor 顾伟
Owner JIANGXI ZHAO CHI SEMICON CO LTD