Suspended crucible cover with height capable of being adjusted in real time for growth of sapphire single crystal by KY method and KY-method sapphire single crystal growth device

Abstract

The invention discloses a KY-method sapphire single crystal growth device. The KY-method sapphire single crystal growth device at least comprises a crucible, a suspension mechanism and a crucible cover, and is characterized in that the crucible cover comprises a cover body, a cover eave and a cover cap, wherein the cover body is annular; the surface of the cover body is provided with a through hole, and the through hole is a hoisting hole; the cover eave is in the shape of a cylindrical tube or in the shape of a trumpet-shaped tube; an opening end of the cover eave is connected with the outercircle of the cover body; the other end of the cover eave is a free end and extends towards the direction of the crucible, and the cover cap is trumpet-shaped; the larger opening end of the cover capis connected with the inner circle of the cover body, and an opening at the other end of the cover cap is a free end and extends towards the direction opposite to the crucible; the cover eave and thecover cap are respectively arranged on two sides of the plane on which the cover body is located; and the suspension mechanism can be connected to the crucible cover so that the crucible cover can suspend above the opening of the crucible in a working state through the suspension mechanism.

Description

technical field [0001] The invention belongs to the field of sapphire crystal growth, and in particular relates to a KY method sapphire single crystal growth crucible. Background technique [0002] At present, domestic and foreign large-size sapphires are mainly grown by KY method and HEM (heat exchange method). Through long-term crystal material quality verification and repeated verification by customers, the single crystal and brightness of sapphire crystals grown by heat exchange method cannot meet customer requirements, especially in the application of LED substrate materials. Therefore, the KY method has become the mainstream method for growing sapphire crystals. [0003] The sapphire crystal material has a high melting point, the melting point is 2050°C, the growth cycle is long and the process is many and complicated. The sapphire crystal growth process is mainly completed by the steps of inoculation-shouldering-diameter control-equal diameter-extraction-annealing. ...

AI Technical Summary

Problems solved by technology

Among them, problems such as polycrystalline and enveloping have little impact on the value of the product; however, the problem of cracking is more serious, and the proportion of cracking problems is also large. Once the crystal is cracked, its value will be greatly reduced, which seriously affects the profit of the enterprise.

[0006] Improper lifting process, inoculation, and shoulder gradient may cause cracking problems in the product

The main reason for the failure of the extraction is that the structure design of the existing crucible cover is unreasonable, which is specifically reflected in the space design after the installation of the existing crucible cover, so that there is not enough space for the crystal to be extracted, so that the crystal and the crucible are not separated. , and eventually the crystal cracks due to the stress difference of different materials; the failure of inoculation and shouldering is mainly due to the insufficient lateral gradient of the raw material solution in the crucible due to the design of the crucible lid structure during the crystal growth at this stage, and the instability leads to the formation of crystals that grow too fast after cracking

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