Photoelectric converter based on silicon photothermal electric effect and manufacturing method thereof

A photoelectric converter, thermoelectric effect technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of limiting the prospect of photothermoelectric effect utilization, small light absorption coefficient of two-dimensional materials, unstable material properties, etc. Availability, high responsiveness, and the effect of improving utilization efficiency

Inactive Publication Date: 2019-05-28
WUHAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the controllable preparation of two-dimensional materials in a large area is difficult, and the light absorption coefficient of two-dimensional materials is very

Method used

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  • Photoelectric converter based on silicon photothermal electric effect and manufacturing method thereof
  • Photoelectric converter based on silicon photothermal electric effect and manufacturing method thereof
  • Photoelectric converter based on silicon photothermal electric effect and manufacturing method thereof

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Embodiment Construction

[0022] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] The principle of this embodiment is: the use of silicon nanostructures can suppress the scattering process of phonons, reduce the electron-phonon scattering effect, generate a carrier temperature decoupled from the lattice temperature, and electrically connect the electrodes with silicon nanostructures. Ohmic contacts are formed to reduce the influence of the photovoltaic effect caused by Schottky contacts. The photoelectric response is driven by the temperature gradient of the photo-induced hot carriers in the silicon nanostructure, and the photothermoelectric effect is enhanced by adjusting the contact barrier of the metal / silicon electrode and the doping polarity and concentration of silicon. Through photo-thermal-electric multiphysics Field transport simulations confirmed the existence of a photoelectric conversion mechanism based on the pho...

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Abstract

The invention relates to a photoelectric conversion technology, in particular to a photoelectric converter based on a silicon photothermal electric effect and a manufacturing method thereof. The photoelectric converter comprises a silicon nanostructure, electrodes and a substrate, wherein the size of at least one dimension of the silicon nanostructure is 1-300 nanometers, the electrodes are in contact with the silicon nanostructure, and the silicon nanostructure is arranged on the substrate. The silicon nanostructure can inhibit the phonon scattering process and reduce the electron-phonon scattering action, a carrier temperature decoupled from a lattice temperature is generated, and the electrically connected electrodes and the silicon nanostructure form ohmic contact, so that the photovoltaic effect influence caused by Schottky contact is reduced. Photoelectric response is driven through the temperature gradient of photothermal carriers in the silicon nanostructure, the photothermal electric effect is enhanced by regulating and controlling the metal/silicon electrode contact barrier and the doping polarity and concentration of silicon, existence of a photoelectric conversion mechanism based on the photothermal electric effect of the silicon nanostructure is confirmed through optical-thermal-electrical multi-physics field transport simulation. The converter can effectively improve the photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical fields of photodetector and photoelectric energy conversion, and in particular relates to a photoelectric converter based on silicon photothermoelectric effect and a manufacturing method thereof. Background technique [0002] Photoelectric conversion is a key mechanism in solar energy utilization, photodetectors and optical information devices. There are many photoelectric conversion mechanisms, the common ones are photoconductive effect, photovoltaic effect and other mechanisms that use photogenerated charge carrier separation, and the mechanism that uses material thermoelectric effect to generate heat from light. In the photoelectric conversion mechanism using the separation of photogenerated carriers, about 40% of the photon energy is wasted due to the rapid relaxation of the generated thermalized carriers to the bottom of the conduction band, and cannot be effectively utilized. This process is due to fast ele...

Claims

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Application Information

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IPC IPC(8): H01L31/09H01L31/0352H01L31/18
CPCY02P70/50
Inventor 管志强刘维康徐红星
Owner WUHAN UNIV
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