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Semiconductor device and formation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as performance to be improved, achieve good flatness and improve process efficiency

Active Publication Date: 2019-06-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices composed of fin field effect transistors in the prior art still needs to be improved

Method used

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  • Semiconductor device and formation method thereof
  • Semiconductor device and formation method thereof
  • Semiconductor device and formation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.

[0030] A method for forming a semiconductor device, please refer to figure 1 , including: providing a semiconductor substrate 100 with fins 110 on the semiconductor substrate 100; forming a gate dielectric material layer 120 on the semiconductor substrate 100 and the fins 110; depositing a gate electrode on the gate dielectric material layer 120 material layer 130 .

[0031] The gate electrode material layer 130 is subsequently patterned to form a part of the gate structure. In order to ensure better electrical performance stability of the gate structure, the surface of the gate electrode material layer 130 needs to have better flatness.

[0032] Since the fin portion 110 protrudes from the semiconductor substrate 100 , after the gate electrode material layer 130 is formed by a deposition process, the gate electrode material layer 130 has a protrusion at a position co...

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Abstract

The invention provides a semiconductor device and a formation method thereof. The method comprises a step of providing a semiconductor substrate with a material layer to be processed, wherein the surface of the material layer to be processed having protrusions, and a step of performing surface processing process of one or more cycles until the protrusions are removed, wherein the surface processing process comprises the steps of forming a cover layer on the surface of the material layer to be processed by a spin coating process, etching the cover layer until top regions of the protrusions areexposed, modifying the surface materials of the protrusions exposed by the cover layer and forming modified layers on the surfaces of the protrusions, and etching and removing the modified layers andthe cover layer after forming the modified layers. According to the method, the surface flatness of the material layer to be processed is effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
Inventor 张城龙纪世良
Owner SEMICON MFG INT (SHANGHAI) CORP