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Image sensor devices

An image sensing and imaging technology, applied in the field of biomedical sensing, can solve the problems of low signal-to-noise ratio and affecting device performance, etc.

Inactive Publication Date: 2019-06-18
SILICON OPTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, no matter it is used for image sensing or various detection tasks, image sensors still have thorny problems such as cross-talk and low signal-to-noise ratio (SNR), which affect device performance

Method used

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Embodiment Construction

[0043] see figure 1 , according to an embodiment of the present invention, an image sensing device 10 is disclosed. figure 1 It is a schematic cross-sectional view of the image sensing device 10 of this embodiment.

[0044] Such as figure 1 As shown, the image sensing device 10 includes a substrate 12, a photoelectric conversion unit 14 for collecting image charges, a first dielectric layer 16, a multilayer metal layer 18, a trench 20, a filling material 22, a second dielectric layer 24, and a light source 26 .

[0045] In this embodiment, the image sensing device 10 is a front illuminated (FSI) image sensing device.

[0046] According to some embodiments of the present invention, the image sensing device 10 may also include an object to be detected 28 and a detection light source 29 .

[0047] Such as figure 1 As shown, the photoelectric conversion unit 14 is disposed in the substrate 12 . The first dielectric layer 16 is disposed on the substrate 12 . The metal layer ...

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PUM

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Abstract

An image sensor device is provided. The image sensor device includes a substrate, a plurality of photoelectric conversion units for collecting image signals disposed in the substrate, a first dielectric layer disposed upon the substrate, a plurality of metal layers disposed in the first dielectric layer, a trench used for serving as an optical path to collect optical signals and disposed in the first dielectric layer and located between the adjacent metal layers, a filling material, such as high refractive index material or material allowing particular wavelength to pass therethrough, filled in the trench, a second dielectric layer disposed upon the first dielectric layer, and a light source or a detected object disposed over the second dielectric layer. The metal layer adjacent to the substrate is defined as a first metal layer. The metal layer adjacent to the top of the first dielectric layer is defined as a top metal layer. The trench extends from the top of the first dielectric layer towards the substrate to the first metal layer.

Description

technical field [0001] The present disclosure relates to an image sensing device, in particular to an image sensing device capable of effectively collecting optical signals and improving signal-to-noise ratio (SNR), especially for biomedical sensing. Background technique [0002] An image sensor is a semiconductor device that converts light images into electrical signals. Image sensors are generally classified into Charge Coupled Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS) image sensors. Among the above image sensors, a complementary metal oxide semiconductor (CMOS) image sensor includes a photodiode for detecting incident light and converting it into an electrical signal, and a logic circuit for transmitting and processing the electrical signal. [0003] Among the current image sensors, in addition to the traditional image sensing, more and more image sensors have been used in various detection tasks, such as biomedical detection, through the The excit...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14629H01L27/14643H01L27/14623H01L27/1462H01L27/14636H01L27/148H01L27/1464H01L27/14625A61B5/7203H01L27/14603H01L27/14683H01L27/14627H01L27/14678H10K39/32
Inventor 陈俊伯
Owner SILICON OPTRONICS