Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

White light quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of inability to prepare stacked quantum dot light-emitting layers, achieve stable polychromatic light, improve stability, and expand options range effect

Active Publication Date: 2020-08-14
TCL CORPORATION
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a white light quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the existing white light quantum dot light-emitting diode cannot be prepared by the solution method due to the interference of the solvent in the quantum dot solution to the lower quantum dot. Layer Quantum Dot Light-Emitting Layer Problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0035] As an implementation, X 2 For -COOH, -OH, -CN, -NHCO-CH 3 , -NH 2 , -SH, -CHO, the replacement ligands formed can be understood as strong polar ligands, including but not limited to thioglycolic acid, 3-mercaptopropionic acid, 3-mercaptobutyric acid, 6-mercaptohexanoic acid, mercaptoethyl Amine, 3-mercaptopropylamine, 4-mercaptobenzoic acid, mercaptoglycerol, 1-trimethylamineethanethiol, mercaptoaniline, nitroaniline, sulfoaniline, aminobenzoic acid, 4-(diphenylphosphino) At least one of benzoic acid.

[0036] As another embodiment, X 2 For -CO-, -COOR, -NO 2 , -O-, -O-CH 3 , -CH 3 When, the formed replacement ligand can be understood as a weakly polar replacement ligand, including but not limited to octylamine, propylamine, hexadecylamine, 4-mercaptoanisole, 1-hydroxy-3-methoxy-propane At least one of. Of course, the embodiment of the present invention can also adjust the polarity of the replacement ligand by adjusting the carbon chain length of R. Specifically, the long...

Embodiment 1

[0075] This embodiment provides a white light quantum dot light-emitting diode and a manufacturing method thereof. The white light quantum dot light emitting diode includes laminated ITO glass, a PEDOT layer, a TFB layer, a CdSe red light quantum dot light emitting layer, a CdSe green light quantum dot light emitting layer, a CdSe blue light quantum dot light emitting layer, a ZnO layer and an Al layer. And in the surface layer of the bonding surface of the CdSe red light quantum dot light-emitting layer and the CdSe green light quantum dot light-emitting layer, the quantum dots and the CdSe green light quantum dot light-emitting layer and the CdSe blue quantum dot light-emitting layer are bonded with 3-mercapto groups on the surface layer. Propionic acid ligands, and adjacent 3-mercaptopropionic acid ligands are cross-linked.

[0076] The quantum dot light-emitting diode of this embodiment is prepared according to the following method:

[0077] S11. Dissolve 3-mercaptopropionic a...

Embodiment 2

[0083] This embodiment provides a white light quantum dot light-emitting diode and a manufacturing method thereof. The white light quantum dot light emitting diode includes laminated ITO glass, a PEDOT layer, a TFB layer, a CdSe red light quantum dot light emitting layer, a CdSe green light quantum dot light emitting layer, a CdSe blue light quantum dot light emitting layer, a ZnO layer and an Al layer. And in the surface layer of the bonding surface of the CdSe red light quantum dot light-emitting layer and the CdSe green light quantum dot light-emitting layer, the quantum dots and the CdSe green light quantum dot light-emitting layer and the CdSe blue quantum dot light-emitting layer are bonded with 3-mercapto groups respectively on the surface layer. The propylamine ligand and the propylamine ligand, and the adjacent 3-mercaptopropylamine ligands, the propylamine ligands, and the 3-mercaptopropylamine ligand and the propylamine ligand are cross-linked.

[0084] The quantum dot...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a white-light quantum dot light-emitting diode. The white-light quantum dot light-emitting diode comprises a bottom electrode, a light-emitting layer and a top electrode, wherein the light-emitting layer is a laminated light-emitting layer, the laminated light-emitting layer includes N light-emitting films which are laminated and combined, the first to the (N-1)th light-emitting films are quantum dot light-emitting films, the Nth light-emitting film is a quantum dot light-emitting film or an organic light-emitting film, and N is a positive integer which is greater than or equal to 2; in two oppositely laminated and combined surfaces of the adjacent quantum dot light-emitting films, the surface of quantum dots contained at least in the surface layer of at least one surface is bound with a displacement ligand, the structural general formula of the displacement ligand is X1-R-X2, R is an alkyl or alkyl derivative, X1 is a functional group crosslinked with the quantum dot, X2 is a polarity regulating functional group, and the crosslinking activity of the X1 and the quantum dot is greater than the crosslinking activity of the X2 and the quantum dot.

Description

Technical field [0001] The invention belongs to the technical field of flat panel displays, and in particular relates to a white light quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device. It uses quantum dots (QDs) as the light-emitting layer, which has incomparable advantages over other light-emitting materials, such as Controllable small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have huge application prospects in the field of display technology in the future. [0003] Under normal circumstances, the surface of quantum dots will be connected to organic ligands through chelation or other methods, or through the formation of chemical bonds to connect inorganic ligands. The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, the surface ligands can passivate the defects on...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com