Semiconductor structure and method for manufacturing same

Abstract

The application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises: a substrate, a buffer layer on the substrate and a barrier layer on the buffer layer. The barrier layer is n-type doped metal nitride composed of a Ga element, an N element and another group III element, and comprises a plurality of combined layers. Each of the combined layers includes a plurality of sub-layers. According to the provided semiconductor structure and its manufacturing method, by doping the barrier layer and performing component modulation, the gate leakage current can be significantly reduced and the RF chromatic dispersion can be minimized.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] As a representative of the third-generation semiconductor materials, gallium nitride (gallium nitride) has many excellent characteristics, such as high critical breakdown electric field, high electron mobility, high two-dimensional electron gas concentration, and good high temperature working ability. Gallium nitride-based third-generation semiconductor devices, such as high electron mobility transistors (HEMTs) and heterojunction field effect transistors (HFETs), have been applied, especially in fields requiring high power and high frequency such as radio frequency and microwave. has obvious advantages. [0003] One of the key factors in achieving high-performance radio frequency (RF) performance of HEMT devices is minimizing RF dispersion. RF dispersion is expressed...

AI Technical Summary

Problems solved by technology

Although using SiN x Thin film surface passivation can partially alleviate this problem, but SiN x Passivation effect on the surface and SiN x Deposition conditions are very sensitive, so the method is less reproducible and repeatable

Also, once the barrier layer thickness is reduced (for higher frequency applications), bringing the electrons in the 2DEG closer to the surface, the RF dispersion problem becomes more severe

Therefore, the SiNx passivation layer solution is no longer suitable for solving the RF dispersion problem

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