Preparation process and application of vertical-heterogeneous organic spin electronic device

A technology of spintronic devices and preparation process, applied in the field of spintronics, can solve the problems of low device repetition rate, uncontrollable effective length, complex interface, etc., and achieve the effect of avoiding electrical short circuit and avoiding electrical short circuit

Active Publication Date: 2019-07-02
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the problem of interdiffusion at the organic/inorganic interface, the thickness of the organic layer is uncontrollable, the effective length of the electron spin diffusion channel in the vertical structure spin valve is uncontrollable, the device repetition rate is low, and the mechanism is controversial; tunneling junction devices need to be supplemented by insulation Isolation layer, complex

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  • Preparation process and application of vertical-heterogeneous organic spin electronic device
  • Preparation process and application of vertical-heterogeneous organic spin electronic device
  • Preparation process and application of vertical-heterogeneous organic spin electronic device

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Using single crystal SrTiO 3 substrate, epitaxially grow a single crystal LSMO film with a thickness of 30nm on its surface, and optically etch it into a 50 micron wide strip electrode; then use the optical overlay method to grow Cr (5nm ) / Au(25nm) strip electrode; using ultra-high vacuum thermal evaporation to grow wedge-shaped organic layer Alq on the surface of LSMO and Cr / Au electrode 3 , the thickness of the wedge-shaped organic layer is 10-100nm, and the thickness of the wedge-shaped organic layer changes continuously along the direction of the LSMO strip electrode. The thinnest part is 10nm, and the thickest part is 100nm; A Co electrode with a thickness of 15nm is used, and a physical mask is used to realize the in-situ forming of the strip electrode. The direction is perpendicular to the LSMO electrode, and a NaCl protective layer is grown on the surface of the Co strip electrode.

[0037] The vertical-heterogeneous organic spintronic device prepared in this e...

Embodiment 2

[0040] Using single crystal SrTiO 3 substrate, epitaxially grow a single crystal LSMO film with a thickness of 30nm on its surface, and optically etch it into a 50 micron wide strip electrode; then use the optical overlay method to grow Cr (5nm ) / Au(25nm) strip electrode; using ultra-high vacuum thermal evaporation to grow wedge-shaped organic layer Alq on the surface of LSMO and Cr / Au electrode 3 , the thickness of the wedge-shaped organic layer is 10-100nm, and the thickness of the wedge-shaped organic layer changes continuously along the direction of the LSMO strip electrode. The thinnest part is 10nm, and the thickest part is 100nm; A Co electrode with a thickness of 15nm is used, and a physical mask is used to realize the in-situ forming of the strip electrode. The direction is perpendicular to the LSMO electrode, and a NaCl protective layer is grown on the surface of the Co strip electrode.

[0041] By applying a voltage between LSMO-Cr / Au, a spin-polarized current is i...

Embodiment 3

[0043] Using single crystal SrTiO 3 substrate, epitaxially grow a single crystal LSMO film with a thickness of 30nm on its surface, and optically etch it into a 50 micron wide strip electrode; then use the optical overlay method to grow Cr (5nm ) / Au(25nm) strip electrode; using ultra-high vacuum thermal evaporation to grow wedge-shaped organic layer Alq on the surface of LSMO and Cr / Au electrode 3 , the thickness of the wedge-shaped organic layer is 10-100nm, and the thickness of the wedge-shaped organic layer changes continuously along the direction of the LSMO strip electrode. The thinnest part is 10nm, and the thickest part is 100nm; A Co electrode with a thickness of 15nm is used, and a physical mask is used to realize the in-situ forming of the strip electrode. The direction is perpendicular to the LSMO electrode, and a NaCl protective layer is grown on the surface of the Co strip electrode.

[0044] By applying a voltage between LSMO-Cr / Au, a spin-polarized current is i...

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Abstract

The invention discloses a preparation process and application of a vertical-heterogeneous organic spin electronic device, belongs to the field of spin electronics, and combines the advantages of a transverse device and a longitudinal device. On the one hand, the invention avoids the problem of electrical short circuit of a vertical structure through transversely injecting spin polarization currentand transversely injecting the spin polarization current into an organic material; on the other hand, the electron spin is longitudinally detected, the length of the spin diffusion channel is the thickness of the thin film, the wedge-shaped organic thin film is adopted, and nano-scale continuous adjustment of the length of the spin diffusion channel is achieved, thereby achieving the control andutilization of electron spin in organic matter through an external electric field and a magnetic field in a multi-mode mode. The vertical-heterogeneous organic spin electronic device provided by the invention can be used for controlling the electron spin of spin diffusion length in a nano-scale material, can be used for the multi-mode control over the electron spin in the same device, and can achieve the magnetoresistive effect, the non-local magnetoresistance effect and a spin Hanle effect of an organic spin valve.

Description

technical field [0001] The invention belongs to the field of spin electronics, and relates to a preparation process and application of a vertical-heterogeneous organic spin electronics device. Background technique [0002] Spintronics studies the manipulation and utilization of electron spins, endowing traditional electronic devices and optoelectronic devices with new functions. Compared with microelectronic devices, spintronic devices have the characteristics of fast response, high storage density, low energy consumption, and non-volatility. The weak spin-orbit coupling of organic substances and the hyperfine interaction of nuclear spin suppressed by π electrons, long spin relaxation time, easy preparation and low production cost are important materials for the wide application of spintronic devices in the future. At present, the principle device of organic spin electronics is mainly a vertical structure organic spin valve, which is composed of upper and lower magnetic ele...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L43/08
CPCH10N50/10H10N50/01
Inventor 方梅肖柱李周张桑箭李浩
Owner CENT SOUTH UNIV
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