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Preparation method of three-dimensional porous In2O3 nano-cube bread gas sensitive material

A technology of three-dimensional porous and gas-sensing materials, which is applied in the field of three-dimensional porous In2O3 nano-cube gas-sensing materials and their preparation, can solve the problems of film peeling and gas-sensing characteristics decline, and achieves the effect of firm bonding and improving gas-sensing characteristics.

Inactive Publication Date: 2019-07-05
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the present In 2 o 3 As a gas-sensing material, the particle aggregation and grain growth caused by heat-induced growth, as well as the film shedding caused by the traditional sensitive film transfer process, lead to the problem of the decline of gas-sensing properties. The present invention provides a three-dimensional porous In 2 o 3 Nano cubic bread gas-sensitive material and preparation method thereof

Method used

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  • Preparation method of three-dimensional porous In2O3 nano-cube bread gas sensitive material
  • Preparation method of three-dimensional porous In2O3 nano-cube bread gas sensitive material
  • Preparation method of three-dimensional porous In2O3 nano-cube bread gas sensitive material

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Embodiment 1

[0019] The steps of a preparation method of a three-dimensional porous In2O3 nano cube bread gas-sensitive material are as follows:

[0020] 1. Cleaning of Ag interdigitated electrodes: place the electrodes in acetone and alcohol for ultrasonic treatment for 15 minutes, and then ultrasonically clean them in deionized water for 30 minutes;

[0021] 2. Growth seed layer: weigh 0.3g In(NO 3 ) 3 Add it to 5ml of absolute ethanol, stir ultrasonically for 30 minutes to obtain a seed layer solution, spray the seed layer solution evenly on the cleaned electrode sheet with a spray gun, and dry it at 60°C, and finally place the electrode sheet in a muffle furnace at 550°C Calcined for 90min;

[0022] 3. Growth In 2 o 3 : Weigh 0.8g In(NO 3 ) 3 , 2.4gNH 4 F and 0.2g of urea were placed in 50ml of deionized water, and the mixed solution was subjected to magnetic stirring and ultrasonic treatment for 15 minutes, respectively, to obtain a transparent growth liquid, which was poured i...

Embodiment 2

[0024] The steps of a preparation method of a three-dimensional porous In2O3 nano cube bread gas-sensitive material are as follows:

[0025] 1. Cleaning of Ag interdigitated electrodes: place the electrodes in acetone and alcohol for ultrasonic treatment for 15 minutes, and then ultrasonically clean them in deionized water for 30 minutes;

[0026] 2. Growth seed layer: weigh 0.1g In(NO 3 ) 3 Add it to 5ml of absolute ethanol, stir ultrasonically for 30 minutes to obtain a seed layer solution, spray the seed layer solution evenly on the cleaned electrode sheet with a spray gun, and dry it at 60°C, and finally place the electrode sheet in a muffle furnace at 600°C Calcined for 90min;

[0027] 3. Growth In 2 o 3 : Weigh 0.6g In(NO 3 ) 3 , 1.8g NH 4 F and 0.2g of urea were placed in 50ml of deionized water, and the mixed solution was subjected to magnetic stirring and ultrasonic treatment for 15 minutes, respectively, to obtain a transparent growth liquid, which was poured ...

Embodiment 3

[0029] The steps of a preparation method of a three-dimensional porous In2O3 nano cube bread gas-sensitive material are as follows:

[0030] 1. Cleaning of Ag interdigitated electrodes: place the electrodes in acetone and alcohol for ultrasonic treatment for 15 minutes, and then ultrasonically clean them in deionized water for 30 minutes;

[0031] 2. Growth seed layer: weigh 0.2g In(NO 3 ) 3 Add it to 5ml of absolute ethanol, and stir it ultrasonically for 30 minutes to obtain a seed layer solution. Use a spray gun to evenly spray the seed layer solution onto the cleaned electrode sheet and dry it at 60°C, and finally place the electrode sheet in a muffle furnace at 650°C Calcined for 90min;

[0032] 3. Growth In 2 o 3 : Weigh 0.7g In(NO 3 ) 3 , 2.1 g NH 4 F and 0.2g of urea were placed in 50ml of deionized water, and the mixed solution was subjected to magnetic stirring and ultrasonic treatment for 15 minutes, respectively, to obtain a transparent growth liquid, which wa...

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Abstract

The invention relates to the technical field of new materials, in particular to a three-dimensional porous In2O3 nano-cube bread gas sensitive material and a preparation method thereof, which solve the problems of particle aggregation and grain growth caused by heat-induced growth of In2O3 serving as a gas sensitive material at present and gas sensitive property recession due to film peeling caused by the traditional sensitive film transfer process. The preparation method adopted by the invention comprises the steps of: cleaning an Ag interdigital electrode plate; (2) growing a seed layer; (3)and growing the In2O3.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a three-dimensional porous In 2 o 3 Nano cube bread gas sensitive material and preparation method thereof. Background technique [0002] In 2 o 3 Compared with other oxide semiconductors, the thin film has higher electron mobility and carrier concentration, and its electron mobility is as high as 75cm 2 / Vs. Therefore, In 2 o 3 It is a recently emerging gas-sensitive material. In 2 o 3 The gas sensing mechanism of the sensor is the change of conductivity caused by the adsorption of the target gas, and the desorption of the surface gas makes the sensor return to the initial resistance. Therefore, the performance of the gas sensor largely depends on the In 2 o 3 Microscopic morphology, specific surface area, porosity and other factors. Researchers have successfully synthesized In microspheres, nanosheets, coral, corundum, nanoflowers, and nanofibers. 2 o 3 gas ...

Claims

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Application Information

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IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 于灵敏马海宁祁立军马帅李源张波曹磊范新会
Owner XIAN TECHNOLOGICAL UNIV
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