A kind of qled device and preparation method thereof

Abstract

The invention discloses a QLED device and a preparation method thereof, and the QLED device comprises a cathode, an anode, and an electron transmission layer and a quantum dot light-emitting layer which are both arranged between the cathode and the anode. The electron transmission layer is a II-IV group semiconductor nanorod array which is vertically arranged relative to the surface of the cathode. The material of the quantum dot light-emitting layer is quantum dots, and the quantum dots grow at the tops of the II-IV group semiconductor nanorods. Light generated by the quantum dot light-emitting layer can pass in the axial direction of the II-IV group semiconductor nanorods in a more concentrated and lower-loss manner, and light is emitted from the cathode of the device, so that the luminous efficiency and the brightness of the device are greatly improved. According to the invention, the distances between the quantum dots with different particle sizes can be indirectly and accurately controlled through the control of the diameter of the II-IV group semiconductor nanorods and the distance between the adjacent nanorods in the array, thereby achieving the performance optimization of the QLED device.

Description

technical field

[0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a QLED device and a preparation method thereof. Background technique

[0002] Quantum dot electroluminescence is a new type of solid-state lighting technology. It has the advantages of low cost, light weight, fast response speed, and high color saturation. It has broad development prospects and has become one of the important research directions for the new generation of LED lighting.

[0003] The quantum dot light-emitting device (QLED device) currently studied generally includes a first electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a second electrode. According to the relative positions of the first electrode and the second electrode, the QLED structure can be divided into a positive structure and an inverted structure. The hole injection layer and the hole transport layer are use...

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