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Composite type filtered arc ion plating with composite magnetic field and lined bias voltage stepped tube

A technology of arc ion plating and arc plasma, which is applied in the field of material surface treatment, can solve problems such as large particle defects, pollution, vacuum chamber space and deposition position limitations, and achieve effective control, improve utilization efficiency, and ensure uniformity Effect

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Combining the multi-level magnetic field filtering method and the composite effect of the mechanical barrier shielding of the lined bias ladder tube device's own shape and the bias electric field attraction to eliminate the large particles contained in the arc plasma At the same time, ensure that the arc plasma passes through the lined bias stepped tube device and the multi-stage magnetic field filter device with high transmission efficiency, and then use the movable coil device to control the transmission from the multi-stage magnetic field device and the lined bias stepped tube device The transmission direction of the arc plasma in the vacuum chamber realizes the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcomes the limitation of the deposition position or the shape of the substrate caused by the design of the vacuum chamber space and target source layout. The problem of uneven film deposition can completely remove the large particle defects that may remain in the arc plasma transmitted from the multi-level magnetic field device and the lined bias stepped tube device, so that the surface of the workpiece can be adjusted under the condition of applying a negative bias voltage. Ion energy, to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film, reduce the production cost of using alloy targets, improve the transmission efficiency of arc plasma, increase the deposition speed of films and reduce or even eliminate large particles The adverse effects of defects on the microstructure of thin films, continuous dense deposition and performance, proposed a combined magnetic field and lined bias stepped tube compound filter arc ion plating

Method used

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  • Composite type filtered arc ion plating with composite magnetic field and lined bias voltage stepped tube
  • Composite type filtered arc ion plating with composite magnetic field and lined bias voltage stepped tube
  • Composite type filtered arc ion plating with composite magnetic field and lined bias voltage stepped tube

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate the present embodiment, the present embodiment combines the magnetic field and the arc ion plating of the liner bias stepped tube compound type filter, and the device used includes the bias power supply (1), the arc power supply (2), the arc ion plating target source (3 ), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), lined bias ladder tube device (6), lined bias power supply (7), movable coil device (8), movable coil device power supply ( 9), rheostat device (10), sample stage (11), bias power waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the lined bias voltage ladder tube device (6), the movable coil device (8) and the vacuum chamber (13 ) are insulated fro...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating of the composite filter of the lined bias ladder tube, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply (5 ) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), the liner bias step tube device (6) maintains a positive DC bias, turn on the bias power supply (1), and turn on the power supply of the movable coil device ( 9) Adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform film deposition, and prepare multi-layer structure films with different stress states, microstructures and element ratios, and others are the same as in Embodiment 2 same.

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PUM

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Abstract

The invention discloses a composite type filtered arc ion plating with a composite magnetic field and a lined bias voltage stepped tube, and belongs to the technical field of material surface treatment. The problems of contamination of thin films by large particles and loss in the process of plasma transmission in a multistage magnetic field filter device are solved. A device comprises bias voltage power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, a lined bias voltage stepped tube device and bias voltage power supply, a movable coil device and power supply, a sample table, a bias voltage power supply waveform oscilloscope, and a vacuum chamber; and thin film deposition is conducted, specifically, the device is connected, asystem is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a plating power supply is turned on, energy of arc plasma is regulated by using the biasvoltage power supply, large particle defects in the arc plasma are eliminated and the transmission efficiency in the filter device is improved through the lined bias voltage stepped tube device and the multistage magnetic field device, the loss in the vacuum chamber is reduced, technological parameters are set, and thin film preparation is conducted.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field and an inner-lined bias stepped tube for composite filtering, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/56C23C14/34C23C14/35
CPCC23C14/325C23C14/564C23C14/35C23C14/3485
Inventor 魏永强王好平刘源张华阳侯军兴蒋志强
Owner 魏永强
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