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Method and system for analyzing foreign matter layer on solder joint surface inside semiconductor device

An analytical method, semiconductor technology, used in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, instrumentation, etc.

Active Publication Date: 2021-07-09
INTEL PROD CHENGDU CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is limited by the fact that the Z-section of the vertical section of the solder joint is too thin, so even if there are other more complex analysis tools or methods, it cannot guarantee the analysis of the cause of the surface processing defects of the solder joint.

Method used

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  • Method and system for analyzing foreign matter layer on solder joint surface inside semiconductor device
  • Method and system for analyzing foreign matter layer on solder joint surface inside semiconductor device
  • Method and system for analyzing foreign matter layer on solder joint surface inside semiconductor device

Examples

Experimental program
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Effect test

Embodiment 1

[0035] This embodiment discloses an analysis method for the foreign matter layer on the surface of the solder joint inside the semiconductor device, such as figure 1 : In S01, physical grinding is used to remove the base material and / or package filler on the foreign matter layer on the surface of the internal solder joints of the semiconductor device; in S03, the surface of the ground internal solder joints is cleaned with a focused ion beam until the surface of the internal solder joints exposed as Figure 4 The horizontal section of the foreign matter layer; in S05, continue to use the focused ion beam to clean the foreign matter layer until the end faces of the foreign matter layer are exposed in both the longitudinal and transverse directions; The included angle is less than 15°; use a material analyzer to analyze the foreign matter layer exposed on the longitudinal and transverse end faces after cleaning; this cleaning method uses focused ion beam cleaning to cover a par...

Embodiment 2

[0037] This embodiment discloses a method for analyzing the foreign matter layer on the surface of the internal solder joint of the semiconductor device. On the basis of the method provided in Example 1, further, in S02, in order to avoid removing the foreign matter layer by physical grinding, remove the foreign matter on the surface of the internal solder joint by physical grinding At least 90% of the base material and / or packaging filler on the layer stop grinding, and an optical microscope system is used to assist observation and judgment; in order to ensure a large enough foreign matter layer exposure area to provide more foreign matter information, continue to use focused ion beam When cleaning the foreign matter layer, such as Figure 5 , the end surface area exposed by the foreign matter layer is not less than 300 square microns, preferably, if the end surface area exposed by the foreign matter layer reaches about 450 square microns, and it is judged at S06; in the clean...

Embodiment 3

[0041] This embodiment discloses such as figure 2 The analysis system 10 for the foreign matter layer on the surface of the solder joint inside the semiconductor device includes a physical grinding unit 11, a focused ion beam cleaning unit 12 and an analysis unit 13;

[0042] The analysis system 10 of the foreign matter layer on the surface of the solder joint inside the semiconductor device is characterized in that the physical grinding unit 11 stops the physical grinding when removing at least 90% of the base material and / or packaging filler on the foreign matter layer on the surface of the internal solder joint, and passes The optical microscope system observes and judges, thereby obtaining a horizontal section (X~Y plane), and a foreign matter layer close to the surface of the internal solder joint; the focused ion beam cleaning unit 12 is used for cleaning the internal solder joint surface after the physical grinding unit grinds Clean until the horizontal section of the ...

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PUM

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Abstract

The invention belongs to the technical field of surface treatment of solder joints inside semiconductor devices, and discloses a method and system for analyzing foreign matter layers on the surface of solder joints inside semiconductor devices. First, physical grinding is used to remove the base material and / or the foreign matter layer on the surface of wafer solder joints. Encapsulate the filler; then use the focused ion beam to clean the polished wafer surface until the foreign matter layer is exposed on the polished surface of the wafer; continue to use the focused ion beam to clean the foreign matter layer until the foreign matter layer exposes the end faces both vertically and laterally; And during the above cleaning process, keep the focused ion beam and the surface of the wafer directly forming an angle less than 15°; use a material analyzer to analyze the foreign matter layer exposed on the longitudinal and transverse end faces after cleaning.

Description

technical field [0001] The invention belongs to the technical field of surface treatment of solder joints inside semiconductor devices, and in particular relates to an analysis method for using focused ion beams to break through the analysis limitation of microscopic pollution layers on the solder joints inside semiconductor devices. Background technique [0002] Failure of the internal solder joint connections of packaged CPUs is a very common failure mechanism in semiconductor manufacturing. In order to reduce the impact of this failure mechanism on the CPU manufacturing process, it is usually necessary to analyze the packaged samples to find out the cause of the solder joint failure and cut off the source of the problem. [0003] Focused ion beam (FIB) is a microdissection technology that uses electrostatic lenses to focus ion beams into very small sizes. The ion beams of commercial focused ion beam systems are mostly extracted from liquid metal ion sources. Since galliu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/02G01N23/00
CPCG01N23/00H01L21/02041H01L22/12
Inventor 李文婷毛飞燕
Owner INTEL PROD CHENGDU CO LTD