Transverse double-diffused metal oxide semiconductor device and electronic device

A technology of oxide semiconductor and lateral double diffusion, which is applied in the direction of semiconductor devices, circuits, transistors, etc., can solve the problem of low forward conduction voltage, achieve the effect of increasing the ratio, wide application, and improving high-frequency performance

Active Publication Date: 2019-07-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
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  • Claims
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Problems solved by technology

At the same time, its forward conduction vo

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  • Transverse double-diffused metal oxide semiconductor device and electronic device
  • Transverse double-diffused metal oxide semiconductor device and electronic device
  • Transverse double-diffused metal oxide semiconductor device and electronic device

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Embodiment Construction

[0040] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0041] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the examples set forth herein. Rather, these examples are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0042] The terminology used herein is for the purpose of describing specific examples only and not as limitations of the present invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include the plural for...

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Abstract

The invention provides a transverse double-diffused metal oxide semiconductor device and an electronic device. The semiconductor device comprises a substrate; and a source region and a drain region, and the source region and the drain region are located in the substrate, wherein a source and a drain are formed on the surface of the substrate on the source region and the drain region, respectively,and a schottky diode is formed between the source and the drain. The drift extension in the off state is depleted by the body region and the device operates as a conventional LDMOS. When the device is switched on or switched off, the schottky diode is switched on or switched off more quickly and is turned on earlier to improve high frequency performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a lateral double-diffused metal oxide semiconductor device and an electronic device having the same. Background technique [0002] With the continuous development of semiconductor technology, lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) devices are widely used in power integrated circuits because of their good short-channel characteristics. LDMOS devices are well suited for applications in RF (Radio Frequency) base stations and power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) conversion. In the application of RF technology, because LDMOS has high power performance, high gain, excellent linearity (linearity) and low manufacturing cost, LDMOS devices are mainly used in base station circuits. In the application of power MOSFETs, such as in DC-CD converters, LDMOS devices have excellent conversion performance, and compared ...

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Application Information

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IPC IPC(8): H01L29/78
CPCH01L29/782
Inventor 冯喆韵胡林辉姚尧蒲贤勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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