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Method for strengthening interface heat transfer through applying gallium-based thermal interface material to aluminum substrate

A thermal interface material, aluminum substrate technology, applied in chemical instruments and methods, surface reaction electrolytic coatings, electrolytic coatings, etc., to achieve the effect of reducing contact thermal resistance

Active Publication Date: 2019-07-16
DALIAN MARITIME UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While ensuring the high thermal conductivity of the aluminum substrate, this method can not only isolate the chemical reaction between the gallium-based liquid metal and the aluminum substrate, but also effectively solve the conductivity problem introduced by the liquid metal.

Method used

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  • Method for strengthening interface heat transfer through applying gallium-based thermal interface material to aluminum substrate
  • Method for strengthening interface heat transfer through applying gallium-based thermal interface material to aluminum substrate
  • Method for strengthening interface heat transfer through applying gallium-based thermal interface material to aluminum substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer, comprising the steps of:

[0036] (1). Aluminum sheet pretreatment: Use a CNC milling machine to cut the pure aluminum sheet to the required size (a disc with a diameter of 11.4mm-13.8mm), immerse it in acetone solution with a mass fraction of 97vol%, and use ultrasonic The cleaning instrument was fully shaken for 10 minutes to remove the oil on the surface of the aluminum sheet. Then use absolute ethanol to clean according to the above steps, and finally use deionized water to clean according to the above steps to ensure that the surface of the aluminum sheet is clean and pollution-free.

[0037] (2). Preparation of aluminum oxide film: use an anodic oxidation reaction device to oxidize the surface of the aluminum base, and the reaction device is as follows figure 1shown. The device is used for polishing and chromic acid anodizing treatment ...

Embodiment 2

[0050] A method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer, comprising the steps of:

[0051] (1). Aluminum sheet pretreatment: Use a CNC milling machine to cut the pure aluminum sheet to the required size (a disc with a diameter of 11.4mm-13.8mm), immerse it in an acetone solution with a mass fraction of 85vol%, and use ultrasonic The cleaning instrument was fully shaken for 15 minutes to remove the oil on the surface of the aluminum sheet. Then use absolute ethanol to clean according to the above steps, and finally use deionized water to clean according to the above steps to ensure that the surface of the aluminum sheet is clean and pollution-free.

[0052] (2). Preparation of aluminum oxide film: use an anodic oxidation reaction device to oxidize the surface of the aluminum base, and the reaction device is as follows figure 1 shown. The device is used for polishing and chromic acid anodizing treatm...

Embodiment 3

[0060] A method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interfacial heat transfer, comprising the steps of:

[0061] (1). Aluminum sheet pretreatment: Use a CNC milling machine to cut the pure aluminum sheet to the required size (a disc with a diameter of 11.4mm-13.8mm), immerse it in acetone solution with a mass fraction of 90vol%, and use ultrasonic The cleaning instrument was fully shaken for 10 minutes to remove the oil on the surface of the aluminum sheet. Then use absolute ethanol to clean according to the above steps, and finally use deionized water to clean according to the above steps to ensure that the surface of the aluminum sheet is clean and pollution-free.

[0062] (2). Preparation of aluminum oxide film: use an anodic oxidation reaction device to oxidize the surface of the aluminum base, and the reaction device is as follows figure 1 shown. The device is used for polishing and chromic acid anodizing treatment...

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Abstract

The invention discloses a method for strengthening interface heat transfer through applying a gallium-based thermal interface material to an aluminum substrate. The method comprises the following steps: (1) pretreating an aluminum sheet: submerging the aluminum sheet into an acetone solution, ethanol and water sequentially, and carrying out ultrasonic treatment for 10 to 25 minutes; (2) preparingan aluminum oxide film: subjecting the pretreated aluminum sheet to alkali washing, polishing, deoxidation and chromic acid anodizing, so as to prepare the aluminum oxide film; and (3) preparing a three-layer structure test sample: coating the surface of the aluminum oxide film of the aluminum sheet with gallium-based liquid-state metal, sequentially superposing the aluminum substrate, the aluminum oxide film, the gallium-based liquid-state metal, the aluminum oxide film and the aluminum substrate together, and carrying out preparing under the pressure of 4 MPa to 11 MPa. According to the method, interfacial heat transfer can be strengthened through applying a gallium-based liquid-state metal thermal interface material to the surface of the aluminum substrate for the first time, the blankin this field is filled up, and the problem of electric conduction present when the liquid-state metal thermal interface material is applied to a metallic solid interface is solved.

Description

technical field [0001] The invention relates to the field, in particular to a method for applying a gallium-based thermal interface material to an aluminum substrate to enhance interface heat transfer. Background technique [0002] With the rapid development of integrated circuits and electronic packaging technology, the volume of electronic devices and logic circuits has shrunk rapidly, and the computing speed has increased sharply, and the heat flux density of electronic components has also increased sharply. The heat dissipation of electronic devices is one of the important factors affecting the reliability of equipment, and also determines the overall performance of electronic systems. In order to ensure the normal operation of electronic devices and prolong their service life, it is particularly important to optimize the heat dissipation process in electronic devices. In electronic components, the thermal resistance between the chip and the heat sink is one of the main...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B37/00C25D11/16C25D11/08
CPCB32B37/00B32B2307/302C25D11/08C25D11/16
Inventor 纪玉龙闫慧龙肖秀马鸿斌
Owner DALIAN MARITIME UNIVERSITY
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