Composite doped bismuth ferrite-barium titanate binary lead-free ferroelectric ceramic material, preparation method and application thereof

A technology of composite doping and ferroelectric ceramics, which is applied in the direction of fixed capacitor dielectric and fixed capacitor parts, etc., can solve the problems of poor ferroelectric performance and leakage of BFO ceramics, and achieve the effect of reducing volatilization and stabilizing the preparation process

Inactive Publication Date: 2019-07-16
HARBIN UNIV OF SCI & TECH
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  • Abstract
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Problems solved by technology

[0003] The present invention aims to solve the problems of poor ferroelectric performance and serious leakage of BFO ceramics prepared by traditional solid-phase synthes

Method used

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  • Composite doped bismuth ferrite-barium titanate binary lead-free ferroelectric ceramic material, preparation method and application thereof
  • Composite doped bismuth ferrite-barium titanate binary lead-free ferroelectric ceramic material, preparation method and application thereof
  • Composite doped bismuth ferrite-barium titanate binary lead-free ferroelectric ceramic material, preparation method and application thereof

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specific Embodiment approach 1

[0015] Specific Embodiment 1: In this embodiment, the general chemical formula of a compound-doped bismuth ferrite-barium titanate binary system lead-free ferroelectric ceramic material is (1-y)BiFeO 3 -yBa 1-x (Li + 0.5 A 3+ 0.5 ) x TiO 3 , where x and y are mole fractions, 0.005≤x≤0.06, 0.1≤y≤0.35, A 3+ Ion is Al 3+ , Ga 3+ 、In 3+ or Er 3+ ion.

specific Embodiment approach 2

[0016] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the compound doped bismuth ferrite-barium titanate binary system lead-free ferroelectric ceramic material has a general chemical formula of (1-y)BiFeO 3 -yBa 1-x (Li + 0.5 A 3+ 0.5 ) x TiO 3 , where x and y are mole fractions, 0.01≤x≤0.06, 0.15≤y≤0.3, A 3+ Ion is Al 3+ , Ga 3+ 、In 3+ or Er 3+ ion. Others are the same as the first embodiment.

specific Embodiment approach 3

[0017] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the compound doped bismuth ferrite-barium titanate binary system lead-free ferroelectric ceramic material has a general chemical formula of (1-y)BiFeO 3 -yBa 1-x (Li + 0.5 A 3+ 0.5 ) x TiO 3 , where x and y are mole fractions, 0.02≤x≤0.04, 0.2≤y≤0.25, A 3+ Ion is Al 3+ , Ga 3+ 、In 3+ or Er 3+ ion. Others are the same as those in Embodiment 1 or 2.

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Abstract

The invention discloses a composite doped bismuth ferrite-barium titanate binary lead-free ferroelectric ceramic material, a preparation method and application thereof, belongs to the field of lead-free ferroelectric ceramic materials, particularly relates to the composite doped bismuth ferrite-barium titanate binary lead-free ferroelectric ceramic material, the preparation method and applicationthereof, and aims to solve the problem that the BFO ceramic prepared by the conventional solid phase synthesis method has poor ferroelectric performance and serious electric leakage. The chemical general formula of the ceramic material is (1-y)BiFeO<3-y>Ba<1-x>(Li<0.5><+>A<0.5><3+>)<x>TiO3. The ceramic material is obtained by adopting a sintering manner combining SPS rapid low-temperature sintering and solid phase synthesis, the system is a perovskite phase, and has no impurity phase, the prepared ceramic material has excellent electrical properties and relatively high Curie temperature, the preparation process of the material is stable, and the material has a relatively good application prospect. The prepared ceramic material is used as an electronic component in fields of temperature-stable capacitors and high-temperature applications.

Description

technical field [0001] The invention belongs to the field of lead-free ferroelectric ceramic materials, and in particular relates to a composite-doped bismuth ferrite-barium titanate binary system lead-free ferroelectric ceramic material, a preparation method and an application thereof. Background technique [0002] BaTiO 3 (BT) ceramics are the earliest and most widely used ferroelectric ceramic materials. They have good dielectric and ferroelectric properties and have good application prospects in the fields of multilayer ceramic capacitors and microwave dielectrics. However, the biggest problem with BT is its low Curie temperature (T C ~120°C), and the Curie temperature of BT after element doping generally drops to around room temperature or even lower, so this fatal shortcoming greatly limits the application of BT in other fields. In contrast, BiFeO 3 (BFO) Curie temperature (T C ~830℃) is very high, although BFO is the only multiferroic material with both ferroelect...

Claims

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Application Information

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IPC IPC(8): C04B35/26C04B35/622H01G4/12
CPCC04B35/2683C04B35/2691C04B35/622C04B2235/3203C04B2235/3215C04B2235/3217C04B2235/3232C04B2235/3272C04B2235/3286C04B2235/3298C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567C04B2235/661C04B2235/666H01G4/1209H01G4/1227
Inventor 徐丹赵文杰陈明华
Owner HARBIN UNIV OF SCI & TECH
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