Mid-infrared light detector and preparation method thereof

A detector, infrared light technology, applied in the field of photoelectric detection, to achieve high photoresponsivity, improve the effect of weak light absorption

Active Publication Date: 2019-07-23
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
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Problems solved by technology

However, the current heterojunction photodetectors composed of quantum dots and graphene can only detect light in the ultraviolet and visible light ranges, and few heterojunction photodetectors can detect light in the near-infrared or even mid-infrared bands. , so it is imperative to push the research of heterojunction photodetectors formed by graphene and quantum dots to the detection of mid-infrared (MIR)

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  • Mid-infrared light detector and preparation method thereof
  • Mid-infrared light detector and preparation method thereof
  • Mid-infrared light detector and preparation method thereof

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Embodiment Construction

[0029] Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of applying the technical solutions of the present invention, and all technical solutions formed by adopting equivalent replacements or equivalent transformations fall within the protection scope of the present invention.

[0030] The invention discloses a mid-infrared photodetector and a preparation method thereof, a mid-infrared photodetector, as shown in the attached figure 1 As shown, it includes a single crystal silicon substrate 1, an insulating layer 2, a continuous graphene layer 4, a quantum dot layer 5 and a nano-grating contact electrode covering the quantum dot; the single crystal silicon substrate 1, insulating layer 2, The continuous graphene layer 4, the quantum dot layer 5 and the nano-grating contact electrodes covering the quantum dots are all arranged...

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Abstract

The invention discloses a mid-infrared light detector and a preparation method thereof. The mid-infrared light detector comprises a monocrystalline silicon substrate, an insulating layer, a continuousgraphene layer, a quantum dot layer and a nano grating contact electrode covering the quantum dot; the monocrystalline silicon substrate, the insulating layer, the continuous graphene layer, the quantum dot layer and the nano grating contact electrode covering the quantum dots are uniformly distributed on a PVC substrate. The mid-infrared light detector is composed of a periodic nano grating array, which has a coupling effect on incident light beams that can effectively overcome the defect of weak light absorption of a graphene photoelectric detector, and the prepared photoelectric detector has obvious absorption on the spectrum of a mid-infrared band and has a higher light response rate.

Description

technical field [0001] The invention relates to a mid-infrared light detector and a preparation method thereof, which can be used in the technical field of photoelectric detection. Background technique [0002] Graphene, as a two-dimensional material, has attracted much attention due to its flat monolayer of carbon atoms with ultrahigh strength and free carrier mobility. Graphene nanostructures are already compatible with silicon-based platforms for electronics and photonics. Many researchers have studied optoelectronic devices based on graphene nanostructures, including photodetectors, light modulators, light limiters, etc., with the main goal of obtaining higher photocurrent and thus better efficiency. Although graphene has these special properties, its low light absorption and short carrier lifetime limit the response of graphene photodetectors, so overcoming the shortcomings of graphene and improving the performance of photodetector devices has become the main research ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/101H01L31/18
CPCH01L31/035218H01L31/101H01L31/18Y02P70/50
Inventor 郑加金张勇李霄兰徐香刘晨昕聂娟余柯涵韦玮
Owner NANJING UNIV OF POSTS & TELECOMM
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