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A perovskite cspbbr 3 Quantum dots and their preparation methods and applications

A quantum dot and perovskite technology, applied in the field of perovskite CsPbBr3 quantum dots and its preparation, can solve the problems of insufficient product stability, difficulty in large-scale production, complex preparation process, etc., and achieves mild conditions, high repetition rate, Simple steps to operate

Active Publication Date: 2021-12-24
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a kind of perovskite CsPbBr for overcoming the defects described in the above-mentioned prior art that high temperature environment is required, inert gas protection is required, the preparation process is complicated, the difficulty is large, it is difficult to produce on a large scale and the product stability is insufficient. 3 A preparation method of quantum dots, the preparation method has simple operation steps, mild conditions, no need for protective gas, high repetition rate, large-scale production, stable product, and high-efficiency fluorescence

Method used

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  • A perovskite cspbbr <sub>3</sub> Quantum dots and their preparation methods and applications
  • A perovskite cspbbr <sub>3</sub> Quantum dots and their preparation methods and applications
  • A perovskite cspbbr <sub>3</sub> Quantum dots and their preparation methods and applications

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Embodiment 1

[0039] In this embodiment, 0.1 g of solid catalyst silicon sphere particles are added.

[0040] A perovskite CsPbBr 3 The preparation method of quantum dots, the steps are as follows:

[0041] S1. 0.147g metal halide salt PbBr 2 and 0.085g CsBr were weighed and put into a 50mL seed bottle, then 10mL DMF was added, and then 1.8mL oleic acid and 0.6mL oleylamine were added to form a mixed solution.

[0042] S2. Take 0.1g of silicon spheres and add them to the mixed solution in step S1. Stir in a water bath at 60°C at a speed of 800-1000r / min for 2h to obtain a precipitate, then centrifuge and wash with ethyl acetate at a speed of 9000r / min for 5min to collect the precipitate , namely the perovskite CsPbBr 3 quantum dots. Dry it in a drying oven at 40°C for 24 hours to obtain the perovskite CsPbBr synthesized by a simple method in the present invention 3 quantum dots.

Embodiment 2

[0044]In this embodiment, 0.2 g of solid catalyst silicon sphere particles are added.

[0045] This embodiment prepares perovskite CsPbBr 3 The steps for quantum dots are as follows:

[0046] S1. 0.147g metal halide salt PbBr 2 Weigh and put 0.085g CsBr into a 50mL seed bottle, then add 10mL DMF, then add 1.8mL oleic acid and 0.6mL oleylamine to form a mixed solution.

[0047] S2. Add 0.2g of silicon sphere particles to the mixed solution in step S1. Stir in a water bath at 60°C at a speed of 800-1000r / min for 2h to obtain a precipitate, then centrifuge and wash with ethyl acetate at a speed of 9000r / min for 5min to collect the precipitate , namely the perovskite CsPbBr 3 quantum dots. Dry it in a drying oven at 40°C for 24 hours to obtain the perovskite CsPbBr synthesized by a simple method in the present invention 3 quantum dots.

Embodiment 3

[0049] In this embodiment, 0.3 g of solid catalyst silicon sphere particles are added.

[0050] This embodiment prepares perovskite CsPbBr 3 The steps for quantum dots are as follows:

[0051] S1. 0.147g metal halide salt PbBr 2 Weigh and put 0.085g CsBr into a 50mL seed bottle, then add 10mL DMF, then add 1.8mL oleic acid and 0.6mL oleylamine to form a mixed solution.

[0052] S2. Take 0.3g of silicon spheres and add them to the mixed solution in step S1. Stir in a water bath at 60°C at a speed of 800-1000r / min for 2h to obtain a precipitate, then centrifuge and wash with ethyl acetate at a speed of 9000r / min for 5min to collect the precipitate , namely the perovskite CsPbBr 3 quantum dots. Dry it in a drying oven at 40°C for 24 hours to obtain the perovskite CsPbBr synthesized by a simple method in the present invention 3 quantum dots.

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Abstract

The invention discloses a perovskite CsPbBr 3 The method for preparing quantum dots is characterized in that it includes the following features: S1. Prepare a compound containing CsBr, PbBr 2 , a mixed solution of dimethylformamide, oleic acid and oleylamine; S2. In the mixed solution of step S1., add silicon sphere particles, and then stir and react at 30-60°C for at least 1h to obtain the perovskite CsPbBr 3 quantum dots. The preparation method provided by the present invention only needs to add a solid catalyst silicon sphere particle in the preparation process, which can quickly precipitate the perovskite CsPbBr 3 Quantum dots have simple operation steps, short reaction time, mild conditions, no need for protective gas, high repetition rate, and large-scale production; moreover, the product is stable, the original structure of perovskite will not be destroyed, and the obtained product can still Maintain the original high-efficiency fluorescence characteristics.

Description

technical field [0001] The present invention relates to the technical field of luminescent materials, more specifically, to a perovskite CsPbBr 3 Quantum dots and their preparation methods and applications. Background technique [0002] Lead halide perovskite quantum dots have a wide range of applications in photodetection, solar cells, lighting, display and other fields due to their extremely high luminous color purity, luminous efficiency, high carrier mobility, and high quantum efficiency. application. [0003] At present, the methods for preparing perovskite quantum dots mainly include thermal injection method and supersaturated recrystallization method. The hot injection method requires a harsh synthesis environment. The preparation process requires a high temperature environment and an inert gas for protection. The preparation is difficult, the synthesis efficiency is low, and it is not conducive to large-scale production. The supersaturated recrystallization method...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G21/00C09K11/66
CPCC01G21/006C09K11/665C01P2004/03C01P2004/62
Inventor 李杨练惠旺胡义华窦晓静康茹
Owner GUANGDONG UNIV OF TECH
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