Non-stoichiometric perovskite film and preparation method thereof, and application of non-stoichiometric perovskite film
A non-stoichiometric, perovskite technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of short film preparation cycle, long cycle, cumbersome perovskite film preparation methods, etc., to achieve The film forming process is simple and easy to control, the types and dosage are small, and the solution components are easy to control
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[0026] The preparation method of the non-stoichiometric ratio perovskite film provided by the present invention comprises: coating a solution containing an amine halide compound and a lead halide compound on a substrate, and performing heat treatment; In the lead compound solution, the molar ratio of the amine halide compound to the lead halide compound is 1:x, where 1<x<2.
[0027] Preferably, x is 1.01-1.9, preferably 1.1-1.75, more preferably 1.2-1.5, even more preferably 1.25-1.5.
[0028] In the present invention, by using a solution containing an amine halide compound and a lead halide compound in excess of the amine halide, the preparation process of the perovskite film is simplified, the type and amount of raw materials are small, the preparation cycle is short, and continuous flat and shaped film can be prepared. Shape-controllable perovskite thin films.
[0029] In the present invention, the halogenated amine compound may be one or more of methylammonium iodide (MAI...
Embodiment 1
[0046] 1. Add 0.1mmol PbI 2 Dissolve in 1mL DMF, heat and stir at 80°C for 4 hours to prepare 0.1mol / L PbI 2 / DMF solution.
[0047] 2. Dissolve 0.1 mmol MAI in 1 mL DMF and stir for 0.5 hour to prepare 0.1 mol / L MAI / DMF solution.
[0048] 3. Add PbI at a volume ratio of 1:1.25 2 / DMF and MAI / DMF solutions were mixed to prepare PbI 2 / MAI 1.25 / DMF mixed solution.
[0049] 4. Clean the glass substrate sequentially with alkaline solution, acetone, ethanol, and ultrapure water for 30 minutes.
[0050] 5. Add PbI dropwise on the substrate 2 / MAI 1.25 / DMF mixed solution, the dosage is 30μL / cm 2 , spin-coated at 3000r / min for 30s, and heated on a heating plate at 80°C for 10min to obtain a non-stoichiometric ratio of MA 1.25 PB 3.25 The perovskite thin film A1 has a thickness of 500 nm.
[0051] Measure the XRD collection of collections of this perovskite film with X-ray diffractometer (Bruker company, D8ADVANCE model), as figure 1 shown. Depend on figure 1 It can be...
Embodiment 2
[0053] 1. Add 0.1mmol PbI 2 Dissolve in 1mL DMF, heat and stir at 80°C for 4 hours to prepare 0.1mol / L PbI 2 / DMF solution.
[0054] 2. Dissolve 0.1 mmol MAI in 1 mL DMF and stir for 0.5 hour to prepare 0.1 mol / L MAI / DMF solution.
[0055] 3. PbI will be mixed according to the volume ratio of 1:1.5 2 / DMF and MAI / DMF solutions were mixed to prepare PbI 2 / MAI 1.5 / DMF mixed solution.
[0056] 4. Clean the glass substrate sequentially with alkaline solution, acetone, ethanol, and ultrapure water for 30 minutes.
[0057] 5. Add PbI dropwise on the substrate 2 / MAI 1.5 / DMF mixed solution, the dosage is 30μL / cm 2 , spin-coated at 3000r / min for 30s, and heated on a heating plate at 80°C for 10min to obtain a non-stoichiometric ratio of MA 1.5 PB 3.5 The perovskite thin film A2 has a thickness of 450 nm.
[0058] By measuring the XRD spectrum, it can be seen that the perovskite thin film A2 prepared in this embodiment is continuous and uniform, does not contain PbI 2 an...
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