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LED epitaxial wafer and preparation method thereof

A technology of LED epitaxial wafer and epitaxial layer, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high cost, low device luminous efficiency, large lattice mismatch and thermal mismatch, etc., and can reduce production time. Effect

Inactive Publication Date: 2019-08-20
PEKING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this method, the lattice mismatch and thermal mismatch are large, and the luminous efficiency of the device is low; and the two-step method of growing AlN thin films takes a long time and costs a lot

Method used

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  • LED epitaxial wafer and preparation method thereof
  • LED epitaxial wafer and preparation method thereof
  • LED epitaxial wafer and preparation method thereof

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preparation example Construction

[0031] see figure 1 , 2 , the method for preparing an LED epitaxial wafer according to an embodiment of the present invention, comprising: setting a graphene layer 111 on a substrate 110; setting an AlN layer 120 (aluminum nitride layer) on the graphene layer 111; and, disposing the LED epitaxial layer on the AlN layer 120 .

[0032] The invention peels the AlN layer from the substrate to obtain the LED epitaxial sheet containing the AlN layer, and the prepared LED emits light normally, which is of great significance for the manufacture of flexible and high heat dissipation LEDs. And transform the traditional two-step film-forming method into a one-step method, which significantly reduces the production time.

[0033] Graphene is a two-dimensional layered material composed only of carbon atoms and has excellent thermal and electrical properties. In one embodiment of the present invention, graphene is directly grown on sapphire as a buffer layer, which can reduce the strict ...

Embodiment 1

[0071] 1) Multilayer graphene film growth: put a clean single-polished sapphire substrate into the APCVD chamber, and put Ar and H 2 The gas flow meters were set to 300sccm and 100sccm respectively. After the gas scrubbing, the furnace body was heated to 1050°C, and Ar and H were kept during the heating process. 2 The flow rate does not change. After the furnace temperature rises to 1050°C and stabilizes for 15 minutes, CH 4 The flowmeter was set at 20 sccm, and the growth time was 6 hours. After the growth was completed, the temperature was naturally lowered to obtain a sapphire substrate covered with multi-layer graphene.

[0072] 2) Under normal temperature and low pressure, carry out nitrogen plasma post-treatment on the sapphire substrate covered with multi-layer graphene on the surface, wherein the nitrogen flow rate is 100 sccm, the power is set to 100w, the processing time is 30s, and the pressure is 500Pa, the multi-layer graphene Holes are punched out to obtain a m...

Embodiment 2

[0083] According to the steps of Example 1, only hydride vapor phase epitaxy is used instead of MOCVD, and a multilayer graphene ultraviolet LED is also obtained.

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Abstract

The embodiment of the invention provides an LED epitaxial wafer and a preparation method thereof. The preparation method comprises the steps of arranging a graphene layer on a substrate; arranging anAlN layer on the graphene layer; stripping the AlN layer from the substrate; and arranging an LED epitaxial layer on the AlN layer. According to the preparation method provided by one embodiment of the invention, a two-step film forming method in the traditional industry is converted into a one-step method based on very good heat conductivity and a stress release effect of the multilayer graphene,so that the production time is greatly shortened; and through stripping of the AlN layer, the flexible LED device can be conveniently manufactured, and meanwhile normal light emitting of the device is not influenced.

Description

technical field [0001] The invention relates to an LED epitaxial sheet, in particular to a graphene-based LED epitaxial sheet and a preparation method thereof. Background technique [0002] The third-generation semiconductors based on group III nitride materials such as aluminum nitride (AlN) and GaN have broad application prospects, but the commonly used sapphire substrate has poor heat dissipation and has a large lattice mismatch and thermal mismatch with AlN and GaN. Problems, which limit the popularization and application of third-generation semiconductor lighting devices. [0003] AlN is a Ⅲ-Ⅴ semiconductor with a direct band gap. It has high mechanical strength, radiation resistance, high stability and other properties, and has broad application prospects in the field of high-power optoelectronic devices. In addition, AlN is also an important component of UV LED devices. [0004] At present, the industry adopts the preparation of ultraviolet LED devices on the sapphi...

Claims

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Application Information

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IPC IPC(8): H01L33/64H01L33/00
CPCH01L33/0066H01L33/0093H01L33/641H01L2933/0075
Inventor 刘忠范胡永正高鹏
Owner PEKING UNIV