Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inorganic flexible resistive memory and preparation method thereof

A resistive memory and flexible technology, which is applied in the field of inorganic flexible resistive memory and its preparation, can solve the problems of cracks, the deterioration of storage characteristics of resistive devices, and mechanical fatigue of devices.

Active Publication Date: 2019-08-23
XIANGTAN UNIV
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the device is bent, the stress generated by the functional layer induced by the bending state will change the electrical properties of the device, and the cyclic bending action will cause mechanical fatigue and cracks in the device, resulting in the degradation of the storage characteristics of the resistive switch device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inorganic flexible resistive memory and preparation method thereof
  • Inorganic flexible resistive memory and preparation method thereof
  • Inorganic flexible resistive memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0039] The present invention also provides a preparation method of the inorganic flexible resistive memory described in the above technical solution, comprising the following steps:

[0040] hydrothermally growing metal oxide nanorod arrays on the surface of the conductive flexible substrate to obtain a resistive functional material layer;

[0041] A top electrode layer is deposited on the surface of the resistive variable functional material layer to obtain an inorganic flexible resistive variable memory.

[0042] In the present invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art.

[0043] In the present invention, a metal oxide nanorod array is hydrothermally grown on the surface of the conductive flexible substrate to obtain a resistance-switching functional material layer; in the present invention, before the metal oxide nanorod array is hydrothermally grown on the surface of the cond...

Embodiment 1

[0059] Provide TiO 2 Nanorod array precursor solution:

[0060] With saturated sodium chloride solution, 4.113g of TiCl 3 Set the volume to 40mL, stir at 30°C for 45min, add 0.48g of urea to the above solution, stir for 5h, filter to obtain TiO 2 Nanorod array precursor solution;

[0061] The titanium sheet was ultrasonically cleaned with 0.5mol / L sulfuric acid solution, acetone, deionized water, and absolute ethanol for 10-20 minutes, and then dried at 80°C for 30-50 minutes to obtain a pretreated titanium sheet (0.2mm). ;

[0062] The pretreated titanium sheet is placed in a hydrothermal reaction kettle, one end of the pretreated titanium sheet contacts the bottom of the hydrothermal reaction kettle, and the other end contacts the inner wall of the hydrothermal reaction kettle (after the pretreatment The angle between the titanium sheet and the horizontal direction is 60°C), the TiO 2 After the nanorod array precursor solution was added dropwise into the hydrothermal re...

Embodiment 2

[0067] Provide ZnO nanorod array precursor solution:

[0068] The zinc nitrate hexahydrate of 0.3005g and the hexamethylenetetramine of 0.1409g were fixed to 40ml with deionized water to obtain the ZnO nanorod array precursor solution;

[0069] The titanium sheet was ultrasonically cleaned with 0.5mol / L sulfuric acid solution, acetone, deionized water, and absolute ethanol for 10-20 minutes, and then dried at 80°C for 30-50 minutes to obtain a pretreated titanium sheet (0.2mm). ;

[0070] The pretreated titanium sheet is placed in a hydrothermal reaction kettle, one end of the pretreated titanium sheet contacts the bottom of the hydrothermal reaction kettle, and the other end contacts the inner wall of the hydrothermal reaction kettle (after the pretreatment The included angle between the titanium sheet and the horizontal direction is 60°C), the ZnO nanorod array precursor solution is added dropwise into the hydrothermal reaction kettle, and the hydrothermal reaction (90°C, 5...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of flexible electronic devices, in particular to an inorganic flexible resistive memory and a preparation method thereof. The inorganic flexible resistivememory has better bending characteristics, the high resistance state and low resistance state of the device are relatively stable under different bending radii and bending times, and the influence ofbending deformation on the storage performance of the functional layer material can be effectively alleviated. The inorganic flexible resistive memory has large switching ratio, low setting voltage and no Forming process and can ensure the normal operation of the device and meet the requirements of low power consumption. The inorganic flexible resistive memory has good thermal stability, the highand low resistance states of the device can be kept stable for about 105s under the condition of 85 DEG C, and the ratio of the high and low resistance states of the device is still above 102 after 107 consecutive switching operations in the pulse mode, which can ensure the normal operation of the device without misreading.

Description

technical field [0001] The invention relates to the technical field of flexible electronic devices, in particular to an inorganic flexible resistive variable memory and a preparation method thereof. Background technique [0002] Flexible electronic devices have attracted much attention in the fields of information, energy, and medical treatment due to their unique ductility, low-cost manufacturing process, light weight, and easy-to-carry features. However, in order to realize an integrated flexible electronic system, it is urgent to design and develop flexible resistive memory devices for information storage, data processing and communication. Therefore, the development of flexible resistive memory devices is particularly important. [0003] At present, the widely studied flexible resistive materials mainly include ZnO, ZrO 2 、TiO 2 、Lu 2 o 3 , CuO x , HfO 2 -Al 2 o 3 、Al 2 o 3 -TiO 2 , ZnO-TiO 2 , Fe 3 o 4 -PMMA, ZnO-PVA, etc. Both the inorganic binary metal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00B82Y40/00
CPCB82Y40/00H10N70/801H10N70/021H10N70/011H10N70/8833
Inventor 宋宏甲薛旦汪志瑾冯瑞轩柳莹王金斌钟向丽
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com