Method and device for optimizing thickness of absorption layer of far infrared blocking impurity band detector

Abstract

The invention provides a method and a device for optimizing the thickness of an absorption layer of a far infrared blocking impurity band detector, and the method comprises the following steps: obtaining parameters of a physical model of the blocking impurity band detector, and constructing a numerical model of the blocking impurity band detector; according to the numerical model, obtaining a curve of change of the response rate R of the blocking impurity band detector along with the incident wave length; changing the thickness of an absorption layer in the numerical model to obtain a corresponding spectral response rate curve, and obtaining a peak wavelength P of the spectral response rate curve; obtaining a functional expression of a curve which fits the change of the peak response rateRP along with the thickness Tabs of the absorption layer under the bias voltage UF of the positive electrode; obtaining a functional expression of a curve which fits and blocks the change of the impurity band detector production cost Cm along with the absorption layer thickness Tabs; and obtaining the optimal absorption layer thickness according to the obtained functional expression. The method has the advantages that the functional expressions of cost performance factors of the detector with respect to different absorption layer thicknesses are obtained through numerical simulation and data fitting, and the optimal absorption layer thickness is extracted according to the functional expressions.

Description

technical field [0001] The present invention relates to semiconductor photodetector technology, in particular to a method and device for optimizing the thickness of an absorbing layer of a far-infrared blocking impurity band detector. Background technique [0002] Far-infrared rays generally refer to electromagnetic waves with a wavelength between 25 microns and 500 microns. Far-infrared rays have obvious penetrating ability and fingerprint characteristics, so they have broad application prospects in the fields of astronomical observation, atmospheric monitoring and contraband detection. In the field of astronomical observation, almost all planets and cosmic dust have obvious characteristic absorption peaks in the far-infrared band, and gaseous nebulae can emit far-infrared rays through the internal rotation and vibration of molecules, so the use of far-infrared detectors can achieve high-performance deep space probing. In the field of atmospheric monitoring, compared with...

AI Technical Summary

Problems solved by technology

The thickness of the absorbing layer has a significant impact on the cost performance of BIB detectors. On the one hand, if the thickness of the absorbing layer is too thin, the photoelectric conversion efficiency of far-infrared radiation will decrease; on the other hand, if the thickness of the absorbing layer is too thick, the transport efficiency of photogenerated carriers will decrease. will decrease and the production cost of the detector will increase, so it is particularly important to optimize the thickness of the absorbing layer of the BIB detector

In practical applications, in order to obtain the optimal thickness of the absorbing layer and improve the cost performance of the BIB detector, the existing technology is to use the BIB detector for multiple test pieces and then select the best one, which requires high time and economic costs.

Images