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Method of processing semiconductor substrate and device for processing semiconductor substrate

A processing method and processing device technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor parallelism, uneven surface of the protective tape, and high productivity of integrated circuit chips. Effect of deviation suppression

Pending Publication Date: 2019-09-03
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the surface of the protective tape is uneven, and the surface shape is transferred to the back surface of the wafer after grinding. As a result, the thickness dimension of the integrated circuit chip varies.
In addition, a gap is formed between the guard tape and the wafer at the outer periphery of the wafer, and the grinding fluid penetrates through the gap to contaminate the integrated circuit chip, and the guard tape vibrates during grinding due to the gap at the outer periphery of the wafer. thus becoming the cause of IC chip cracking
In addition, when the surface of the protective tape has unevenness on the outer periphery of the wafer, there is also a concern that the wafer cannot be reliably attracted to the wafer holding table equipped with a vacuum chuck during grinding.
[0006] In addition, even if there is no bump in the integrated circuit chip, when the adhesion accuracy of the protective tape is poor, the parallelism between the back surface of the wafer and the surface of the protective tape becomes poor, and the thickness of the integrated circuit chip varies.
In addition, in the case of an integrated circuit chip in which the silicon part as the semiconductor layer is required to be relatively thin, when it is desired to perform dicing by stealth dicing or half dicing, there is also the following concern: when grinding, the silicon part formed by the protective tape The bonding strength of the integrated circuit chip is not enough to withstand the lateral force received from the grinder, the position of the integrated circuit chip is shifted, and cracks are generated at the corners, etc.
[0007] Moreover, the peeling operation of the protective tape is carried out automatically, but it cannot be peeled quickly in order to avoid removing the bumps or avoiding the residue of the adhesive tape remaining on the integrated circuit chip, so it becomes impossible to obtain high productivity reasons
In addition, in the stripping operation of the protective tape, it is difficult to reliably avoid the removal of the bumps or the residue of the adhesive tape remaining on the integrated circuit chip.
[0008] In Patent Document 1, a technique is described in which the protective tape is peeled off from the wafer after irradiating ultraviolet rays to reduce the adhesiveness. low sex problem

Method used

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  • Method of processing semiconductor substrate and device for processing semiconductor substrate
  • Method of processing semiconductor substrate and device for processing semiconductor substrate
  • Method of processing semiconductor substrate and device for processing semiconductor substrate

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0088] The steps described in the above-mentioned summary of the invention will be described with reference to more specific examples (embodiments). Figure 4 ~ Figure 8 A first embodiment of a series of processes performed on a wafer W on which no bumps are formed on the surface is shown. Figure 4 (a) shows the state where the integrated circuit chip 10 is formed on the surface of the wafer W. Figure 4 of (b)~ Figure 4 (d) respectively shows the step of applying the curing agent 11 for peeling on the wafer W, the step of curing the curing agent 11 by irradiating ultraviolet rays, and applying the curing agent 12 for the protective film on the curing agent 11. on the process.

[0089] As the curing agent 11 for peeling of the coating liquid, for example, materials such as acrylic polymers that are cured by irradiating ultraviolet rays as already described, materials that absorb laser light and generate gas such as a mixture of light absorbers and pyrolytic substances, and...

no. 2 approach

[0097] Figure 9 ~ Figure 12 It is a figure which shows the process of 2nd Embodiment implemented by the apparatus of this invention. The second embodiment shows an example of a series of processes performed when the wafer W has the bumps 31 formed thereon. In this example, the coating of the curing agent 12 for the protective film is performed twice to form a protective film having a thickness of, for example, about 400 μm. That is, if Figure 9 (c), (d), after the curing agent 12 for the protective film is coated on the curing agent 11 for peeling and the curing agent 12 is cured by ultraviolet radiation, then the curing agent 12 Coating curing agent 12 ( Figure 10 (e)). After that, the surface of the curing agent 12 was pressed and flattened by the pressing member 14 made of a quartz glass plate, and then the curing agent 12 was cured by ultraviolet irradiation.

[0098] Also, in the first embodiment, as Figure 5 As shown in (f), (g), and (h), the ESC plate 15 is mo...

no. 3 approach

[0100] Figure 13 to Figure 17 It is a figure which shows the 3rd embodiment of the process implemented by the apparatus of this invention. The third embodiment is an example of a method for isolating a TSV (Through-Silicon Via: Through-Silicon Via) extending vertically to an integrated circuit chip for connection wiring. exist Figure 13 to Figure 17 Among them, 34 is wiring for connection.

[0101] Regarding the step of applying a curing agent for peeling to the surface side of the wafer W ( image 3 (a)) to the process of mounting the ESC plate 15 on the surface of the wafer W ( Figure 14 (f)) is the same as the second embodiment except that the coating of the curing agent 12 for the protective film is performed only once.

[0102] Afterwards, the backside of wafer W is ground by CMP ( Figure 14 (g), after cleaning ( Figure 14 In (h), the front end of the wiring 34 for connection is exposed by etching ( Figure 15 (i)). The etching may be dry etching using an etchi...

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Abstract

The invention provides a technique by which it is possible to smooth a protective film when forming the protective film on a surface side (one side) before the step of reducing the thickness of a backsurface side (the other side) of a semiconductor wafer on which an integrated circuit chip is formed. A device for processing a semiconductor substrate according to the invention includes a module (51) that applies a curing agent (11) for peeling on a front surface side of a wafer W; a module (54) that cures the curing agent (11) via irradiation of ultraviolet rays; a module (52) that applies a curing agent (12) for a protective film on top of the curing agent (11); a module (56) that cures the curing agent (12) via irradiation of ultraviolet rays once the front surface of the curing agent has been pressed by a pressing member (14) comprising a glass plate; a device (G) that subsequently back grinds the wafer (W); a module that bonds a dicing tape on the back surface side of the wafer (W); and a module that subsequently irradiates laser light on the front surface side of the wafer (W) to alter the curing agent (11), generating gas, and peeling the curing agents (11, 12) from the wafer(W).

Description

technical field [0001] The present invention relates to the technical field of forming a protective film for protecting one side when cutting the other side of a semiconductor substrate on which a plurality of integrated circuit chips are formed. Background technique [0002] In the manufacture of an integrated circuit chip, processes such as film formation, pattern mask formation, and etching are performed on a semiconductor wafer such as a silicon wafer to form a plurality of integrated circuits arranged vertically and horizontally. Moreover, after attaching a protective tape for protecting an integrated circuit chip to the surface side of a semiconductor wafer (hereinafter referred to as "wafer"), the back surface side of the wafer is ground (grinding, grinding) to reduce the The thickness of the wafer is divided into individual integrated circuit chips by, for example, a dicing saw after attaching, for example, a dicing tape or a die-bonding film to the back side of the ...

Claims

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Application Information

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IPC IPC(8): H01L21/304
CPCH01L21/304H01L21/31051H01L21/67092H01L21/6836H01L21/6831
Inventor 清田健司福冈哲夫
Owner TOKYO ELECTRON LTD