Three-dimensional stacked cis and its forming method
A stacking and three-dimensional technology, applied in the field of three-dimensional stacked CIS and its formation, can solve the problems that three-dimensional stacked CIS is difficult to cooperate with solder ball array packaging technology
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[0026] In the existing three-dimensional stacked CIS technology, the pixel wafer is first bonded to the carrier wafer, and then the pixel wafer is thinned, and then bonded to the logic wafer from the back side for the second time.
[0027] Figure 1 to Figure 3 It is a schematic diagram of a cross-sectional structure of a device corresponding to each step in a method for forming a three-dimensional stacked CIS in the prior art.
[0028] refer to figure 1 , providing a pixel wafer 120, the front side of the pixel wafer 120 has a pixel metal interconnection structure 122, providing a carrier wafer 100, and bonding the carrier wafer 100 and the front side of the pixel wafer 120 through a first bonding Layer 102 is bonded.
[0029] refer to figure 2 Thinning the pixel wafer 120 from the back side of the pixel wafer 120 to provide a logic wafer 110, the front side of the logic wafer 110 has a logic metal interconnection structure 112, the pixel wafer 120 The back side of the l...
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