Mixed PiN Schottky diode integrating metal oxide semiconductor

Abstract

The invention discloses a mixed PiN Schottky diode integrating a metal oxide semiconductor. The mixed PiN Schottky diode comprises an N<+> substrate layer, a drift layer located on the N<+> substratelayer, a P-type region, a silicon dioxide layer, a metal layer and a metal region, wherein the P-type region comprises groove bottom P-type regions and groove side wall P-type regions; the side edgesof the groove side wall P-type regions are attached to the first side walls of grooves and the side edges of the groove bottom P-type regions; the silicon dioxide layer comprises longitudinal silicondioxide layers and transverse silicon dioxide layers; the transverse silicon dioxide layers are arranged on the grooves and are attached to the second side walls of the grooves; the longitudinal silicon dioxide layers are arranged on the transverse silicon dioxide layers and are attached to the second side walls of the grooves; the metal layer is positioned on the surface of the drift layer, the P-type region and the silicon dioxide layer; part of the metal layer forms the metal oxide semiconductor together with the silicon dioxide layer and the drift layer; and the metal region is located onthe surface of the metal layer. According to the mixed PiN Schottky diode, the P-type region semi-groove structure is adopted, and the metal oxide semiconductor is formed on the silicon dioxide layer;and while the forward conducting resistance is reduced, the leakage current is reduced, and the breakdown characteristic is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a mixed PiN Schottky diode integrated with metal oxide semiconductors. Background technique [0002] With the development of microelectronics technology, the semiconductor material silicon carbide has a large bandgap width, a high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity and other excellent physical and chemical properties are widely used in the production of semiconductor devices , especially suitable for making semiconductor devices with high temperature, high pressure, high power and radiation resistance. Semiconductor devices, as power electronic devices, have the characteristics of small on-resistance, small leakage current, short switching time, and strong anti-surge capability, and are widely used in circuits. [0003] In a Schottky diode with a traditional trench structure, each trench i...

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Problems solved by technology

[0004] Due to the large on-resistance of the Schottky diode in the forward conduction of the traditional groove structure, the leakage current is large, and the breakdown characteristics are poor.

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