Perovskite polycrystalline film printing preparation method

A technology of perovskite and perovskite precursors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of uncontrollable crystallization process and poor scalability of material systems, and achieve industrialization development. The effect of reducing energy consumption

Pending Publication Date: 2019-09-06
麦耀华 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method solves the three major shortcomings of using printing technology to prepare large-area perovskite films in the prior art: high-temperature coating, uncontrollable crystallization process, and poor scalability of the material system, thereby obtaining high-crystallinity, uniform and dense perovskite. crystal thin film

Method used

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  • Perovskite polycrystalline film printing preparation method
  • Perovskite polycrystalline film printing preparation method
  • Perovskite polycrystalline film printing preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1 prepares the MAPbI that contains the MACl additive of different additions 3 film

[0049] (1) MAI and PbI 2 Soluble in a mixed organic solvent with a volume ratio of DMF:DMSO=4:1 (MAI=1M, PbI 2 =1M), and mixed uniformly to obtain a precursor solution. Then respectively add 0%, 10%, 20%, 30%, 50% and 100% of the MACl additive relative to the molar concentration of the precursor solution (1M), to obtain different concentrations of MACl (0M, 0.1M, 0.2M, 0.3M, 0.5M, 1M) mixed solution;

[0050] (2) In a glove box with a room temperature of 25°C, set the height difference between the scraper and the substrate to 200 μm, and apply the mixed solutions containing different concentrations of MACl obtained in step (1) with an amount of 20 μL, using a scraping speed of 8 mm / s. Distributed on the glass substrate to obtain a precursor wet film;

[0051] (3) Put the obtained precursor wet film into a vacuum chamber, pump air at a speed of 100 Pa / s at 25°C to make th...

Embodiment 2

[0054] Embodiment 2 prepares the FA containing the MACl additive of different additions 0.6 MA 0.4 Pb(I 0.6 Br 0.4 ) 3 Thin film (1) MABr, FAI, PbBr 2 and PbI 2 Soluble in DMF:DMSO=4:1 (v:v) mixed organic solvent (MABr=0.4M, FAI=0.6M, PbBr 2 =0.4M, PbI 2 =0.6M), obtain the precursor solution, then add respectively 0%, 10%, 20% and 30% of the MACl additive relative to the precursor solution molar concentration (1M), to obtain different concentrations of MACl (0M, 0.1M, 0.2M, 0.3M) mixed solution;

[0055] Step (2) and (3) are identical with embodiment 1 step (2) and (3);

[0056] (4) The obtained mesophase perovskite film was annealed at 120°C on a heating platform for 10 minutes to obtain FA with different shapes. 0.6 MA 0.4 Pb(I 0.6 Br 0.4 ) 3 perovskite thin film.

[0057] Figure 4 FA was prepared for Example 2 0.6 MA 0.4 Pb(I 0.6 Br 0.4 ) 3 The magnification of the film is 10000 times the SEM image, where Figure a is 0% added amount of MACl, Figure b is...

Embodiment 3

[0058] Embodiment 3 prepares Sn-Pb mixed narrow bandgap (FASnI 3 ) 0.5 (MAPbI 3 ) 0.5 Perovskite polycrystalline film

[0059] (1) SnI 2 , SnF 2 and FAI are dissolved in DMF:DMSO=4:1 (v:v) mixed organic solvent (SnI 2 =1.0M, SnF 2 =1.0M, FAI=1.0M), FASnI was prepared 3 solution. MAI and PbI 2 Soluble in DMF: DMSO=9:1 (v:v) mixed organic solvent (wherein MAI=1.0M, PbI 2 =1.0M), the prepared MAPbI 3 solution, and then FASnI 3 solution and MAPbI 3 The solutions were mixed at a volume ratio of 1:1 to obtain a Pb-Sn mixed precursor solution (FASnI 3 ) 0.5 (MAPbI 3 ) 0.5 , then add 3% Pb(SCN) relative to the molar concentration (1.0M) of the precursor solution 2 Additive, made with 0.03M Pb(SCN) 2 The Sn-Pb mixed solution;

[0060] Step (2) and (3) are identical with embodiment 1 step (2) and (3);

[0061] (4) The obtained mesophase perovskite film was annealed at 100° C. on a heating platform for 10 minutes to obtain a Sn—Pb mixed perovskite film.

[0062] Fi...

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Abstract

The invention belongs to the field of a material preparation process and discloses a perovskite polycrystalline film printing preparation method. The method is characterized by, to begin with, addingproper amount of additives into a perovskite precursor solution to obtain a mixed solution; then, printing the mixed solution on a substrate under a low temperature condition to form a layer of precursor wet film; vacuumizing the precursor wet film to form an intermediate-phase perovskite film; and finally, carrying out thermal annealing processing to obtain a perovskite polycrystalline film whichis high in degree of crystallinity and good in uniformity. The method realizes effective control of crystal mass and film morphology by adding the additives; and the method is widely applicable and can be expanded to preparation of various perovskite films with different components, such as Cs-based total inorganic perovskite, FA-based perovskite or mixed perovskite containing FA / Cs and Pb / Sn mixed perovskite. The method is simple and feasible, and is helpful to realize the large-scale preparation and industrial production of perovskite batteries and other perovskite devices.

Description

technical field [0001] The invention belongs to the field of material preparation technology, and in particular relates to a printing preparation method of a perovskite polycrystalline thin film. Background technique [0002] In recent years, perovskite semiconductor materials have become one of the most promising photovoltaic materials due to their excellent photoelectric properties such as high light absorption coefficient, high carrier mobility, and low exciton binding energy, and have been widely recognized in academia and industry. extensive attention. The photovoltaic performance of perovskite solar cells mainly depends on a layer of perovskite polycrystalline film with a thickness of about 500nm, and the quality of perovskite film mainly depends on the preparation process. At present, in the laboratory, the process of preparing perovskite thin films by solution processing mainly includes a one-step spin coating method based on antisolvent crystallization and a two-st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48
CPCH10K71/13
Inventor 郭飞麦耀华邱舒迪
Owner 麦耀华
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