Lattice-mismatched multi-junction solar cell structure

A solar cell and lattice mismatch technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as lattice mismatch, affecting solar cell efficiency, dislocations, etc., and achieve the effect of high tunneling current

Active Publication Date: 2019-09-13
YANGZHOU CHANGELIGHT
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Problems solved by technology

[0004] In view of this, the present invention provides a lattice-mismatched multi-junction solar cell structure to solve the problem of easily generating d

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  • Lattice-mismatched multi-junction solar cell structure
  • Lattice-mismatched multi-junction solar cell structure
  • Lattice-mismatched multi-junction solar cell structure

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[0031] As mentioned in the background art section, the p-type doped functional layer in the tunnel junction in the prior art usually adopts a p-type (Al) InGaAs layer doped with C, however, the p-type (Al) doped with C in the prior art ) InGaAs is prone to dislocation defects, which affect the efficiency of solar cells.

[0032] The inventor found that the root cause of the above phenomenon is:

[0033] At present, the large-scale commercial lattice-matched three-junction cells focus on the complete adaptation of the lattice constants between the sub-cell materials, so that the band gap combination of the sub-cells is 1.89eV / 1.41eV / 0.67eV, resulting in the band gap of the middle cell. The gap (1.41eV, InGaAs) is quite different from the bottom cell (0.67eV, Ge), so that the photocurrent of the bottom cell is too large, and the infrared part of the solar spectrum beyond 880nm is not fully utilized, which limits the improvement of photoelectric conversion efficiency.

[0034] T...

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Abstract

The invention provides a lattice-mismatched multi-junction solar cell structure which comprises a substrate, a lattice-mismatched sub-battery and a tunnel junction growing on the lattice-mismatched sub-battery, wherein at least one junction of the lattice-mismatched sub-battery is mismatched with a lattice constant of the substrate; the tunnel junction comprises a P-type doping function layer andan N-type doping function layer; and the P-type doping function layer is a C doping P-type AlGaAsSb layer or a C doping P-type GaAsSb layer. The solar cell structure replaces a C doping P-type (Al)InGaAs layer in the prior art with the C doping P-type AlGaAsSb layer or the C doping P-type GaAsSb layer as a P-type doping function layer of a tunnel junction structure of a lattice-mismatched solar cell. The P-type layer does not contain an In component, so that the problem of lattice mismatch with a body material InGaAs in the solar cell caused by inhibition of In component incorporation by source halogen gas due to C doping reaction of the P-type layer can be effectively avoided.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a lattice-mismatched multi-junction solar cell structure. Background technique [0002] Solar cells convert solar energy directly into electricity and are the most efficient form of clean energy. Gallium arsenide triple-junction solar cells have completely replaced Si solar cells and become The main power source of the space vehicle. Among them, the conversion efficiency of gallium arsenide triple-junction solar cells represented by GaInP / InGaAs / Ge has exceeded 30% under the space spectrum (AM0), and the conversion efficiency has exceeded 40% under the condition of high concentration on the ground. Efficiency leader. [0003] Solar cells in the prior art are classified into lattice-matched solar cells and lattice-mismatched solar cells, and lattice-mismatched solar cells are solar cells including lattice-mismatched subcells. It is known that lattice-matched tunn...

Claims

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Application Information

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IPC IPC(8): H01L31/0725H01L31/0216H01L31/036H01L31/032
CPCH01L31/0725H01L31/02167H01L31/036H01L31/0322Y02E10/541
Inventor 吴真龙李俊承何胜吴志明
Owner YANGZHOU CHANGELIGHT
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