Preparation method of two-dimensional GaTe material
A directly above and crucible technology, applied in the field of two-dimensional GaTe material preparation, can solve the problems of GaTe chemical vapor phase synthesis method that has not been reported, and achieve the effect of short response time, good crystallization performance and easy control
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[0027] The present invention discloses a preparation method of a two-dimensional GaTe material. As Example 1, the preparation method includes the following steps:
[0028] Step 1: Weigh a certain amount of tellurium powder and gallium liquid, and place them in two crucibles respectively. The crucible with the tellurium powder as the tellurium source is the first crucible, and the crucible with the gallium liquid as the gallium source is the second crucible;
[0029] Step 2: Place the first crucible and the second crucible in step 1 at the upstream and center of the CVD tube furnace, respectively, with a certain distance between the first crucible and the second crucible;
[0030] Step 3: Place the substrate in the CVD tube furnace and invert it directly above the second crucible;
[0031] Step 4: Pass the mixed gas of argon and hydrogen into the CVD tube furnace, and raise the temperature of the CVD tube furnace. When the temperature is raised to the set temperature, it is kept for a c...
Embodiment 2
[0039] Embodiment 2 is a further improvement on the basis of embodiment 1, and embodiment 2 is as follows:
[0040] Weigh 15 mg of tellurium powder as the tellurium source and place it in the first crucible, and measure 1.5 mL of the gallium solution as the gallium source in the second crucible; place the first crucible on the upstream of the CVD tube furnace, and place the second crucible Placed in the center of the CVD tube furnace, where the distance between the tellurium source and the gallium source is 18cm; the mica substrate is placed upside down directly above the second crucible; in an atmosphere of 50sccm argon and 10sccm hydrogen, the temperature is raised at 50℃ / min To 650℃, keep for 15min, then cool to room temperature naturally.
[0041] From figure 1 It can be seen that the lateral size of the two-dimensional GaTe material can be up to 200 μm. In addition, the color of the two-dimensional GaTe material under the light microscope is almost the same as the color of the...
Embodiment 3
[0045] Embodiment 3 is a further improvement on the basis of embodiment 1, and embodiment 3 is as follows:
[0046] Weigh 15 mg of tellurium powder as the tellurium source and place it in the first crucible, and measure 1.5 mL of the gallium solution as the gallium source in the second crucible; place the first crucible on the upstream of the CVD tube furnace, and place the second crucible Placed in the center of the CVD tube furnace, where the distance between the tellurium source and the gallium source is 18cm; the mica substrate is placed upside down directly above the second crucible; in an atmosphere of 50sccm argon and 10sccm hydrogen, the temperature is raised at 50℃ / min To 700℃, keep for 15min, then cool to room temperature naturally. Under the condition of keeping other conditions unchanged, and only changing the growth temperature, the thickness of the two-dimensional GaTe material will increase significantly, and the thickness of the two-dimensional GaTe material obtai...
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Abstract
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