A method for preparing reconfigurable ultramicroelectrodes with controllable morphology based on magnetic field driving
An ultra-micro-electrode and magnetic field-driven technology, which is applied in the direction of measuring electricity, measuring electrical variables, and electrochemical variables of materials, can solve the problems of low resolution and poor repeatability of electrode patterns, and achieve low cost, simple manufacturing method, and equipment The effect of simple structure
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0025] Embodiment 1, a method for preparing a reconfigurable ultramicroelectrode with controllable morphology based on magnetic field drive, comprising the following steps:
[0026] 1) Referring to Figure 1(a), Figure 1(b) and Figure 1(c), a substrate 1 and a reservoir 2 with a micron groove array are prepared, and a groove array is prepared on the surface of a silicon substrate through a photolithography process to obtain Substrate 1, groove diameter D=5 μm, groove spacing L=10 μm, groove depth H=1 μm;
[0027] 2) Melt 50 μg of 34Bi-66In alloy in an environment of 80°C, add 5 μg of iron powder with a particle size of 100-500nm after it is completely melted, stir evenly, and then vacuum treat it for use;
[0028] 3) Preparation of reconfigurable ultramicroelectrodes 5 with controllable morphology: Referring to Figure 2(a) and Figure 2(b), in an environment of 90°C, first place the substrate 1 in the liquid storage tank 2, A hydrochloric acid solution with a volume concentrati...
Embodiment 2
[0032] Embodiment 2, a method for preparing a shape-controllable reconfigurable ultramicroelectrode based on magnetic field drive, comprising the following steps:
[0033] 1) Referring to Figure 1(a), Figure 1(b) and Figure 1(c), prepare a substrate 1 and a reservoir 2 with a micron groove array, prepare a groove array on the surface of the silicon substrate to obtain a substrate 1, groove Diameter D=10μm, groove spacing L=20μm, groove depth H=3μm;
[0034] 2) Melt 50 μg of 34Bi-66In alloy in an environment of 80°C, add 10 μg of iron powder with a particle size of 100-500 nm after it is completely melted, stir evenly, and then vacuum treat it for use;
[0035] 3) Preparation of reconfigurable ultramicroelectrodes 5 with controllable morphology: Referring to Figure 2(a) and Figure 2(b), in an environment of 90°C, first place the substrate 1 in the liquid storage tank 2, A hydrochloric acid solution with a volume concentration of 17% is added to the tank 2, and a liquid eutecti...
Embodiment 3
[0039] Embodiment 3, a method for preparing a reconfigurable ultramicroelectrode with controllable morphology based on magnetic field drive, comprising the following steps:
[0040] 1) Referring to Figure 1(a), Figure 1(b) and Figure 1(c), prepare a substrate 1 and a reservoir 2 with a micron groove array, prepare a groove array on the surface of the silicon substrate to obtain a substrate 1, groove Diameter D=20μm, groove spacing L=40μm, groove depth H=5μm;
[0041] 2) Melt 100 μg of 34Bi-66In alloy in an environment of 80 ° C, add 30 μg of iron powder with a particle size of 100-500 nm after it is completely melted, stir evenly, and then vacuum treat it for use;
[0042]3) Preparation of reconfigurable ultramicroelectrodes 5 with controllable morphology: Referring to Figure 2(a) and Figure 2(b), in an environment of 90°C, first place the substrate 1 in the liquid storage tank 2, A hydrochloric acid solution with a volume concentration of 20% is added to the tank 2, and a li...
PUM
Property | Measurement | Unit |
---|---|---|
particle diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com