Novel multilayer structure with low electric leakage
A multi-layer structure, low technology, applied in the direction of electrical components, static memory, instruments, etc., can solve the problems of reducing the effective electric field strength, large thickness of the transition layer, etc., and achieve the effect of small leakage current and small leakage characteristics
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[0032] Implementation case 1
[0033] (1) Sr in the novel multilayer structure with lower leakage current for ferroelectric memory devices described in the present invention 2 Bi 4 Ti 5 O 18 The preparation process of the precursor solution of the transition layer and the thin film layer, using bismuth nitrate, strontium acetate, ethylene glycol, acetylacetone, and tetrabutyl titanate as raw materials, is synthesized by the sol-gel method. The specific steps are as follows: The butyl ester and acetylacetone were prepared in a 1:1 ratio by volume: Tetrabutyl titanate acetylacetone was slowly dropped into the acetylacetone solution, and the mixed solution was stirred for 24 hours to obtain a clear yellow-brown transparent A solution; weigh 1.2g strontium acetate, 5.9g bismuth nitrate, and 18.8ml ethylene glycol, mix the three thoroughly, place them on a multi-head magnetic stirrer and stir for 24 hours to obtain a transparent solution B; add solution B slowly In solution A, fully s...
Example Embodiment
[0036] Implementation case 2
[0037] (1) Sr in the novel multilayer structure with lower leakage current for ferroelectric memory devices described in the present invention 2 Bi 4 Ti 5 O 18 The preparation process of the precursor solution of the transition layer and the thin film layer, using bismuth nitrate, strontium acetate, ethylene glycol, acetylacetone, and tetrabutyl titanate as raw materials, is synthesized by the sol-gel method. The specific steps are as follows: The butyl ester and acetylacetone were prepared in a 1:1 ratio by volume: Tetrabutyl titanate acetylacetone was slowly dropped into the acetylacetone solution, and the mixed solution was stirred for 24 hours to obtain a clear yellow-brown transparent A solution; weigh 1.2g strontium acetate, 5.9g bismuth nitrate, and 18.8ml ethylene glycol, mix the three thoroughly, place them on a multi-head magnetic stirrer and stir for 24 hours to obtain a transparent solution B; add solution B slowly In solution A, fully s...
Example Embodiment
[0040] Implementation case 3
[0041] (1) Sr in the novel multilayer structure with lower leakage current for ferroelectric memory devices described in the present invention 2 Bi 4 Ti 5 O 18 The preparation process of the precursor solution of the transition layer and the thin film layer, using bismuth nitrate, strontium acetate, ethylene glycol, acetylacetone, and tetrabutyl titanate as raw materials, is synthesized by the sol-gel method. The specific steps are as follows: The butyl ester and acetylacetone were prepared in a 1:1 ratio by volume: Tetrabutyl titanate acetylacetone was slowly dropped into the acetylacetone solution, and the mixed solution was stirred for 24 hours to obtain a clear yellow-brown transparent A solution; weigh 1.2g strontium acetate, 5.9g bismuth nitrate, and 18.8ml ethylene glycol, mix the three thoroughly, place them on a multi-head magnetic stirrer and stir for 24 hours to obtain a transparent solution B; add solution B slowly In solution A, fully s...
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