An etching solution composition for silver-containing layer and a manufacturing method for an array substrate for display device using the same
A technology of etching solution and composition, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc., can solve the problems of decreased stability over time, and achieve improved stability over time, reduction of silver residue and re-adsorption , silver residue and excellent re-adsorption effect
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experiment example
[0049] By depositing an organic insulating film on the substrate, and on the insulating film with A three-layer film of ITO / Ag / ITO was deposited to form a plate, and the plate was cut into 500×600 mm with a diamond knife to prepare a sample.
[0050] The performance test was performed in the following manner using the etching solution compositions of the above-mentioned Examples 1-6 and Comparative Examples 1-3.
experiment example 1
[0051] Experimental example 1: About the effect of flatness
[0052] Add the etching solution compositions of the above-mentioned Examples 1 to 6 and Comparative Examples 1 to 3 respectively into the experimental equipment of the jet etching method (model name: ETCHER (TFT), K.C. Tech Company), and set the temperature to 40°C Afterwards, the temperature is raised, and then the spray etching equipment is operated after the temperature reaches 40±0.1° C., so that the etching solution is continuously circulated in the spray etching equipment. The etching process of the sample was performed at the time of 6 hours and the time of 12 hours after the temperature reached 40±0.1° C., respectively.
[0053] The total etching time was set to 85 seconds and implemented.
[0054] Spraying was started after placing the substrate, and after 85 seconds of etching time had elapsed, the substrate was taken out, washed with deionized water, and then dried with a hot air drying device. After cl...
Embodiment 2
[0059] Example 2: Measuring the side erosion distance
[0060] Add the etching solution compositions of the above-mentioned Examples 1 to 6 and Comparative Examples 1 to 3 respectively into the experimental equipment of the jet etching method (model name: ETCHER (TFT), K.C. Tech Company), and set the temperature to 40°C Afterwards, the temperature is raised, and then the spray etching equipment is operated after the temperature reaches 40±0.1° C., so that the etching solution is continuously circulated in the spray etching equipment. The etching process of the sample was performed at the time of 6 hours and the time of 12 hours after the temperature reached 40±0.1° C., respectively. The total etching time was set to 85 seconds and implemented.
[0061] Spraying was started after placing the substrate, and after 85 seconds of etching time had elapsed, the substrate was taken out, washed with deionized water, and then dried using a hot air drying device. The substrate was cut ...
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