Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving stability of perovskite device

A technology of perovskite and stability, which is applied in the field of optoelectronic materials to achieve the effect of simple technology and improved stability

Inactive Publication Date: 2019-07-26
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the shortcomings of existing methods such as chemical doping in terms of complexity, controllability, etc., and proposes a method for improving the stability of perovskite devices, which can greatly improve the stability of perovskite batteries and make more Practical photovoltaic devices such as solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving stability of perovskite device
  • Method for improving stability of perovskite device
  • Method for improving stability of perovskite device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This embodiment relates to a method for improving the stability of an organic-inorganic hybrid perovskite device, comprising the following steps:

[0029] S1, preparation of dense zinc oxide substrate: use zinc oxide slurry, spin-coat on the surface of conductive FTO glass for 30s, dry at 120°C for 5min, repeat twice, and then anneal at 350°C for 15min.

[0030] S2, preparation of methylamine lead iodide perovskite film: first prepare the perovskite precursor solution, 461mg PbI 2 , 159mg of methylammonium iodide and 78mg of dimethyl sulfoxide were dissolved in 600mg of dimethylformamide, 60μL was spin-coated on the zinc oxide substrate for 30 seconds at a speed of 4000 rpm, and 0.5mL of diethyl ether was added in 10 seconds The clock drips slowly. The samples were left in the glove box for 24 hours until they turned brown.

[0031] S3, Preparation of perovskite battery: Take the standard n-i-p structure, first grow Spiro-MeOTAD solid electrolyte on the grown perovski...

Embodiment 2

[0034] This embodiment relates to a method for improving the stability of an organic-inorganic hybrid perovskite device, comprising the following steps:

[0035] S1, preparation of dense zinc oxide substrate: use zinc oxide slurry, spin-coat on the surface of conductive FTO glass for 30s, dry at 120°C for 5min, repeat twice, and then anneal at 350°C for 15min.

[0036] S2, preparation of methylamine lead iodide perovskite film: first prepare the perovskite precursor solution, 461mg PbI 2 , 159mg of methylammonium iodide and 78mg of dimethyl sulfoxide were dissolved in 600mg of dimethylformamide, 60μL was spin-coated on the zinc oxide substrate for 30 seconds at a speed of 4000 rpm, and 0.5mL of diethyl ether was added in 10 seconds The clock drips slowly. The samples were left in the glove box for 24 hours until they turned brown.

[0037] S3, Preparation of perovskite battery: Take the standard n-i-p structure, first grow Spiro-MeOTAD solid electrolyte on the grown perovski...

Embodiment 3

[0040] This embodiment relates to a method for improving the stability of an organic-inorganic hybrid perovskite device, comprising the following steps:

[0041] S1, preparation of dense titanium oxide substrate: use titanium oxide slurry, spin-coat on the surface of conductive FTO glass for 30s, dry at 120°C for 5min, repeat twice, and then anneal at 350°C for 15min.

[0042] S2, preparation of formamidine lead iodide perovskite thin film: first prepare formamidine lead iodide precursor solution, take 60 μL and spin-coat it on the zinc oxide substrate for 30 seconds at a speed of 4000 rpm, and add 0.5 mL of diethyl ether in 10 seconds drip slowly. The samples were left in the glove box for 24 hours until they turned brown.

[0043]S3, Preparation of perovskite battery: Take the standard n-i-p structure, grow Spiro-MeOTAD solid electrolyte on the grown perovskite film, prepare Spiro-MeoTAD spin coating solution, mix 72.3mg Spiro-MeoTAD with 27μL 4-tert-butylpyridine 17 μL (c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for improving stability of a perovskite device. A metal heat reflecting layer is arranged in a photovoltaic device containing a perovskite film, and the ion migration process caused by a temperature gradient is reduced by reducing the temperature gradient, thereby the stability of the perovskite device is improved. The invention can greatly improve the stability of a perovskite cell and can be used for manufacturing the more practical photovoltaic devices such as a solar cell.

Description

technical field [0001] The invention relates to a technology in the field of photoelectric materials, in particular to a method for improving the stability of perovskite solar cells and other devices through physical regulation. Background technique [0002] In recent years, new organic-inorganic hybrid perovskite materials, based on lead salts of amine halides such as CH 3 NH 3 PB 3 Represented by its excellent photoelectric conversion performance, carrier conductivity and ease of preparation, it has developed rapidly and produced many eye-catching research results, and the efficiency of perovskite solar cells has developed rapidly in a few years . However, its material stability (perovskite will decompose under the action of water and oxygen) is still a crucial factor restricting the practicality of perovskite devices. However, the current method of improving stability is mainly through chemical doping or adding functional structural layers, etc., which often increases...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/15H10K30/80Y02E10/549
Inventor 刘洪沈文忠王新伟李正平王鑫
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products